9960GM Datasheet: SSM9960GM





9960GM SSM9960GM Datasheet

Part Number 9960GM
Description SSM9960GM
Manufacture Silicon Standard
Total Page 6 Pages
PDF Download Download 9960GM Datasheet PDF

Features: www.DataSheet4U.com SSM9960M/GM DUAL N- CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate ch arge Fast switching characteristics D2 D1 D1 D2 BV DSS R DS(ON) G2 S2 40V 2 0mΩ 7.8A ID SO-8 S1 G1 Descripti on D1 D2 Advanced Power MOSFETs from S ilicon Standard provide the designer wi th the best combination of fast switchi ng, ruggedized device design, low on-re sistance and cost-effectiveness. The SS M9960M is in the SO-8 package, which is widely preferred for commercial and in dustrial surface mount applications, an d is well suited for low voltage applic ations such as DC/DC converters. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level inter connect) as SSM9960GM. Absolute Maximu m Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG T J Parameter Drain-Source Voltage Gate-S ource Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain C urrent 1 3 3 Rating 40 ± 20 7.8 6.2 20 2 0.016 -55 to 150 -55 to 15.

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SSM9960M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement
Lower gate charge
Fast switching characteristics
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BV DSS
R DS(ON)
ID
40V
20m
7.8A
D1
G1 G2
D2
The SSM9960M is in the SO-8 package, which is widely preferred for
S1 S2
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=100°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
± 20
7.8
6.2
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Max.
Value
62.5
Unit
°C/W
8/21/2004 Rev.2.01
www.SiliconStandard.com
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