SSM9960GM

www.DataSheet4U.com SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D2 D1 D1 D2 BV DSS R DS(ON) G2 S2 40V 20mΩ 7.8A ID SO-8 S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9960M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 7.8 6.2 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W 8/21/2004 Rev.2.01 www.SiliconStandard.com 1 of 6 www.DataSheet4U.com SSM9960M/GM Electrical Characteristics @ T j=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 40...