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C5387

Toshiba Semiconductor

2SC5387

2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTI...


Toshiba Semiconductor

C5387

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2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1500 V : VCE (sat) = 3 V (Max.) : tf = 0.15 μs (Typ.) Unit: mm z Collector Metal (Fin) is Fully Covered with Mold Resin. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1500 600 5 10 20 5 50 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16E3A Weight: 5.5 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-22 Free Datasheet http://www.datasheet4u.com/ 2SC5387 ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTIC Collector Cut−off Cur...




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