DATA SHEET
www.DataSheet4U.com
SILICON TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMP...
DATA SHEET
www.DataSheet4U.com
SILICON
TRANSISTOR
2SC3587
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3587 is an
NPN epitaxial
transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This
transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3.8 MIN.
FEATURES
Low noise : NF = 1.7 dB TYP. @ f = 2 GHz
C
3.8 MIN.
3.8 MIN. B
NF = 2.6 dB TYP. @ f = 4 GHz High power gain : GA = 12.5 dB TYP. @ f = 2 GHz GA = 8.0 dB TYP. @ f = 4 GHz
3.8 MIN.
45 °
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg RATING 20 10 1.5 35 580 200 -65 to +150 UNIT V V V mA mW °C °C
PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2
E
φ 2.1
1.8 MAX. 0.55
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Noise Figure SYMBOL ICBO IEBO hFE fT Cre NF
Note
TEST CONDITIONS VCB = 10 V VEB = 1 V VCE = 6 V, IC = 10 mA Pulse VCE = 6 V, IC = 10 mA VCB = 10 V, f = 1 MHz VCE = 6 V, IC = 5 mA f = 2 GHz f = 4 GHz
MIN.
TYP.
0.1+0.06 -0.03
MAX. 1.0 1.0
0.5 ± 0.05
UNIT
µA µA
50
100 10.0 0.2 1.7 2.6
250 GHz 0.7 2.4 pF dB dB...