www.DataSheet4U.com Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3P(H)IS package High speed ...
www.DataSheet4U.com Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION With TO-3P(H)IS package High speed High voltage Low saturation voltage Bult-in damper type
APPLICATIONS Horizontal deflection output for medium resolution display
PINNING PIN
DESCRIPTION
1 Base
2 Collector
3 Emitter
www.jmnic.com
2SC4762
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-Peak
IB Base current
PC Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE 1500 600 5 7 14 3.5 50 150
-55~150
UNIT V V V A A A W
JMnic
www.DataSheet4U.com Product Specification
Silicon
NPN Power
Transistors
www.jmnic.com
2SC4762
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VEBO
Emitter-base breakdown voltage
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
Cob Collector output capacitance
VF Forward voltage(damper diode)
fT Transition frequency
Switching times (inductive load)
ts Storage time
tf Fall time
CONDITIONS IE=300mA ;IC=0 IC=5A IB=1A IC=5A IB=1A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IF=5A IE=0.1A ; V...