DatasheetsPDF.com

STD30NF06L. D30NF06L Datasheet

DatasheetsPDF.com

STD30NF06L. D30NF06L Datasheet






D30NF06L STD30NF06L. Datasheet pdf. Equivalent




D30NF06L STD30NF06L. Datasheet pdf. Equivalent





Part

D30NF06L

Description

STD30NF06L



Feature


www.DataSheet4U.com N-CHANNEL 60V - 0.0 22Ω - 35A DPAK/IPAK STripFET™ POWER MOSFET TYPE STD30NF06L s s s s STD30N F06L VDSS 60 V RDS(on) <0.028Ω ID 35 A s s TYPICAL RDS(on) = 0.022Ω E XCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE ADD SUFFIX “T4” FOR ORD ERING IN TAPE & REEL ADD SUFFIX “-1 FOR ORDERING IN IPAK CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATI.
Manufacture

ST Microelectronics

Datasheet
Download D30NF06L Datasheet


ST Microelectronics D30NF06L

D30NF06L; ONS 3 2 1 3 1 IPAK DPAK DESCRIPTION This Power Mosfet is the latest develo pment of STMicroelectronics unique “S ingle Feature Size™” strip-based pr ocess. The resulting transistor shows e xtremely high packing density for low o n-resistance, rugged avalance character istics and less critical alignment step s therefore a remarkable manufacturing reproducibility. INTERN.


ST Microelectronics D30NF06L

AL SCHEMATIC DIAGRAM APPLICATIONS s HIG H-EFFICIENCY DC-DC CONVERTERS s MOTOR C ONTROL, AUDIO AMPLIFIERS s DC-DC & DC-A C CONVERTERS s AUTOMOTIVE Symbol VDS V DGR VGS ID ID m ABSOLUTE MAXIMUM RATI NGS Parameter Value 60 60 ± 20 35 25 1 40 70 0.46 25 – 55 to 175 (1) ISD ≤ 38A, di/dt ≤400A/µs, V DD ≤ V(BR) DSS , Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C 4U Tj eet IDM .


ST Microelectronics D30NF06L

(l) PTOT Sh ata dv/dt (1) Tstg (q) Pu lse width limited by safe operating are a ww w.D July 2002 .co Drain-sourc e Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Dr ain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100 C Drain Current (pulsed) Total Dissipa tion at TC = 25°C Derating Factor Peak Diode Recovery voltage.

Part

D30NF06L

Description

STD30NF06L



Feature


www.DataSheet4U.com N-CHANNEL 60V - 0.0 22Ω - 35A DPAK/IPAK STripFET™ POWER MOSFET TYPE STD30NF06L s s s s STD30N F06L VDSS 60 V RDS(on) <0.028Ω ID 35 A s s TYPICAL RDS(on) = 0.022Ω E XCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE ADD SUFFIX “T4” FOR ORD ERING IN TAPE & REEL ADD SUFFIX “-1 FOR ORDERING IN IPAK CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATI.
Manufacture

ST Microelectronics

Datasheet
Download D30NF06L Datasheet




 D30NF06L
www.DataSheet4U.com
STD30NF06L
N-CHANNEL 60V - 0.022- 35A DPAK/IPAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD30NF06L
60 V <0.02835 A
s TYPICAL RDS(on) = 0.022
s EXCEPTIONAL dv/dt CAPABILITY
s LOGIC LEVEL GATE DRIVE
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
s ADD SUFFIX “-1” FOR ORDERING IN IPAK
s CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
3
2
1
IPAK
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Operating Junction Temperature
(q) Pulse width limited by safe operating area
July 2002
Value
60
60
± 20
35
25
140
70
0.46
25
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 175
°C
(1) ISD 38A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
1/10




 D30NF06L
www.DataSheet4U.com
STD30NF06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
2.14
100
275
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
35
150
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 5 V, ID = 18 A
VGS = 10 V, ID = 18 A
Min.
1
Typ.
1.7
0.025
0.022
Max.
2.5
0.03
0.028
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > =15 V , ID =15 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
25
1600
215
60
Max.
Unit
S
pF
pF
pF
2/10




 D30NF06L
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30 V, ID = 18 A
RG = 4.7VGS = 4.5 V
(see test circuit, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 48 V, ID = 38 A,
VGS = 5 V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
Test Conditions
VDD = 30 V, ID = 18 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 35 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 38 A, di/dt = 100 A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STD30NF06L
Min.
Typ.
30
105
23
7
10
Max.
31
Unit
ns
ns
nC
nC
nC
Min.
Typ.
65
25
Max.
Unit
ns
ns
Min.
Typ.
70
140
4
Max.
35
140
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Normalized Thermal Impedence
3/10






Recommended third-party D30NF06L Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)