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2SC5070. C5070 Datasheet

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2SC5070. C5070 Datasheet






C5070 2SC5070. Datasheet pdf. Equivalent




C5070 2SC5070. Datasheet pdf. Equivalent





Part

C5070

Description

2SC5070



Feature


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Manufacture

Sanyo Semicon Device

Datasheet
Download C5070 Datasheet


Sanyo Semicon Device C5070

C5070; .


Sanyo Semicon Device C5070

.


Sanyo Semicon Device C5070

.

Part

C5070

Description

2SC5070



Feature


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Manufacture

Sanyo Semicon Device

Datasheet
Download C5070 Datasheet




 C5070
Ordering number:EN4473
NPN Epitaxial Planar Silicon Transistor
2SC5070
Low-Frequency General-Purpose Amplifier,
Driver Applications
Features
· High current capacity.
· Adoption of MBIT process.
· High DC current gain.
· Low collector-to-emitter saturation voltage.
· High VEBO.
Package Dimensions
unit:mm
2084A
[2SC5070]
4.5
10.5
1.9
1.2
2.6
1.4
1.2
1.6
0.5
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
2.5
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=20V, IE=0
VEB=10V, IC=0
VCE=5V, IC=500mA
VCE=5V, IC=1A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
2.5
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Ratings
30
25
15
2
4
0.4
1.5
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Ratings
min typ
800 1500
600
260
27
max
100
100
3200
Unit
nA
nA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12599HA (KT)/52094MT (KOTO) BX-0116 No.4473–1/4




 C5070
2SC5070
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Strage Time
Fall Time
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=1A, IB=20mA
IC=1A, IB=20mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
Ratings
min typ
0.15
0.85
30
25
15
0.14
1.35
0.1
max
0.5
1.2
Unit
V
V
V
V
V
µs
µs
µs
No.4473–2/4




 C5070
2SC5070
No.4473–3/4






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