Embedded Flash Memory
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Intel® Embedded Flash Memory (J3 v. D)
32, 64, 128, and 256 Mbit
Datasheet
Product Features
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Description
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Intel® Embedded Flash Memory (J3 v. D)
32, 64, 128, and 256 Mbit
Datasheet
Product Features
Architecture — High-density symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) Performance — 75 ns Initial Access Speed (128/64/32 -Mbit densities) — 95 ns Initial Access Speed (256 Mbit only) — 25 ns 8-word and 4-word Asynchronous page-mode reads — 32-Byte Write buffer — 4 µs per Byte Effective programming time System Voltage and Power — VCC = 2.7 V to 3.6 V — VCCQ = 2.7 V to 3.6 V Packaging — 56-Lead TSOP package (32, 64, 128 Mbit only) — 64-Ball Intel® Easy BGA package (32, 42, 128 and 256 Mbit)
Security — Enhanced security options for code protection — 128-bit Protection Register — 64-bit Unique device identifier — 64-bit User-programmable OTP cells — Absolute protection with VPEN = GND — Individual block locking — Block erase/program lockout during power transitions Software — Program and erase suspend support — Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible Quality and Reliability — Operating temperature: -40 °C to +85 °C — 100K Minimum erase cycles per block — 0.13 µm ETOX™ VIII Process
Document Number: 308551-004US February 2007
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