BT236-D Triacs Datasheet

BT236-D Datasheet, PDF, Equivalent


Part Number

BT236-D

Description

Sensitive Gate Triacs

Manufacture

SemiWell Semiconductor

Total Page 5 Pages
Datasheet
Download BT236-D Datasheet


BT236-D
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SemiWell Semiconductor
Sensitive Gate Triacs
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 6 A )
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
Non-isolated Type
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, AC switching applications, phase control applica-
tion such as fan speed, light controllers and home appliance
equipment.
Preliminary
BT236-D
Symbol
2.T2
▼▲
3.Gate
1.T1
TO-220
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Sine wave, 50 to 60 Hz, Gate open
TC =101 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
PGM
PG(AV)
IGM
VGM
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC = 101 °C, Pulse width 1.0us
Over any 20ms period
tp = 20us, TJ=125°C
tp = 20us, TJ=125°C
Ratings
600
6.0
60/66
18
3.0
0.3
2.0
10
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A2s
W
W
A
V
°C
°C
Mar, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/5

BT236-D
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BT236-D
Electrical Characteristics
Symbol
Items
IDRM
VTM
I+GT1
I
-
GT1
I
-
GT3
I+GT3
V+GT1
V-GT1
V-GT3
V+GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Rth(j-a)
Repetitive Peak Off-State
Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Thermal Impedance
Conditions
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
IT = 8 A, Inst. Measurement
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
TJ = 125 °C, VD = 1/2 VDRM
TJ = 125 °C, [di/dt]c = -0.5 A/ms,
VD=2/3 VDRM
Junction to case
Junction to Ambient
Ratings
Min. Typ. Max.
Unit
─ ─ 1.0 mA
─ ─ 1.6 V
──5
──5
mA
──5
8 12
─ ─ 1.4
─ ─ 1.4
V
─ ─ 1.4
1.6 2.0
0.2 ─ ─ V
5 ─ ─ V/
─ ─ 10 mA
─ ─ 2.8 °C/W
─ ─ 60 °C/W
Notes :
1. Pulse Width 300us , Duty cycle 2%
2/5


Features www.DataSheet4U.com Preliminary SemiWel l Semiconductor Sensitive Gate Triacs S ymbol BT236-D Features Repetitive Pea k Off-State Voltage : 600V R.M.S On-Sta te Current ( IT(RMS)= 6 A ) ◆ High Co mmutation dv/dt ◆ Sensitive Gate Trig gering 4 Mode ◆ Non-isolated Type ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1 .T1 ○ General Description This devi ce is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic funct ions, AC switching applications, phase control application such as fan speed, light controllers and home appliance eq uipment. TO-220 1 2 3 Absolute Maxim um Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25 °C unless otherwise specified ) Condit ion Sine wave, 50 to 60 Hz, Gate open T C =101 °C, Full Sine wave One Cycle, 5 0Hz/60Hz, Peak, Non-Repetitive tp = 10m s TC = 101 °C, Pulse width ≤ 1.0us O ver any 20ms period tp = 20us, TJ=125° C tp = 20us, TJ=125°C Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current.
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