Gate Triacs. BT236-D Datasheet

BT236-D Triacs. Datasheet pdf. Equivalent

BT236-D Datasheet
Recommendation BT236-D Datasheet
Part BT236-D
Description Sensitive Gate Triacs
Feature BT236-D; www.DataSheet4U.com Preliminary SemiWell Semiconductor Sensitive Gate Triacs Symbol BT236-D Featu.
Manufacture SemiWell Semiconductor
Datasheet
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SemiWell Semiconductor BT236-D
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SemiWell Semiconductor
Sensitive Gate Triacs
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 6 A )
High Commutation dv/dt
Sensitive Gate Triggering 4 Mode
Non-isolated Type
General Description
This device is sensitive gate triac suitable for direct coupling
to TTL, HTL, CMOS and application such as various logic
functions, AC switching applications, phase control applica-
tion such as fan speed, light controllers and home appliance
equipment.
Preliminary
BT236-D
Symbol
2.T2
▼▲
3.Gate
1.T1
TO-220
1
2
3
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Sine wave, 50 to 60 Hz, Gate open
TC =101 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
PGM
PG(AV)
IGM
VGM
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TC = 101 °C, Pulse width 1.0us
Over any 20ms period
tp = 20us, TJ=125°C
tp = 20us, TJ=125°C
Ratings
600
6.0
60/66
18
3.0
0.3
2.0
10
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A2s
W
W
A
V
°C
°C
Mar, 2004. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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SemiWell Semiconductor BT236-D
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BT236-D
Electrical Characteristics
Symbol
Items
IDRM
VTM
I+GT1
I
-
GT1
I
-
GT3
I+GT3
V+GT1
V-GT1
V-GT3
V+GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Rth(j-a)
Repetitive Peak Off-State
Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Thermal Impedance
Conditions
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
IT = 8 A, Inst. Measurement
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
TJ = 125 °C, VD = 1/2 VDRM
TJ = 125 °C, [di/dt]c = -0.5 A/ms,
VD=2/3 VDRM
Junction to case
Junction to Ambient
Ratings
Min. Typ. Max.
Unit
─ ─ 1.0 mA
─ ─ 1.6 V
──5
──5
mA
──5
8 12
─ ─ 1.4
─ ─ 1.4
V
─ ─ 1.4
1.6 2.0
0.2 ─ ─ V
5 ─ ─ V/
─ ─ 10 mA
─ ─ 2.8 °C/W
─ ─ 60 °C/W
Notes :
1. Pulse Width 300us , Duty cycle 2%
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SemiWell Semiconductor BT236-D
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Fig 1. Gate Characteristics
101
100 25
I+GT1
I -GT1
I -GT3
10-1
100
VGM (10V)
25
I+GT3
PG(AV) (0.3W)
PGM (3W)
VGD(0.2V)
101 102
Gate Current [mA]
103
104
Fig 3. On State Current vs.
Maximum Power Dissipation
10
9
π θ 2π
8
θ
7
360°
6
θ : Conduction Angle
5
4
3
θ = 180o
θ = 150o
θ = 120o
θ = 90o
θ = 60o
θ = 30o
2
1
0
01234567
RMS On-State Current [A]
8
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
80
70
60
60Hz
50
40
30 50Hz
20
10
0
100 101
Time (cycles)
102
BT236-D
Fig 2. On-State Voltage
102
101 TJ = 125oC
TJ = 25oC
100
0.5 1.0 1.5 2.0 2.5 3.0
On-State Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
130
3.5
120
π θ 2π
110 θ
360°
θ : Conduction Angle
100
012345
RMS On-State Current [A]
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
103
θ = 30o
θ = 60o
θ = 90o
θ = 120o
θ = 150o
θ = 180o
67
V
+
GT1
V
-
GT1
V-
102 GT3
101
-50
V
+
GT3
0 50 100
Junction Temperature [oC]
150
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