TPV5051

www.DataSheet4U.com TPV5051 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV5051 is Designed for AB Push Pull, Common Emitter from 470 to 860 MHz Applications. PACKAGE STYLE BMA-2 MILLIMETER S MIN MAX 20.07 20.57 6.35 6.85 4.20 5.02 1.40 1.65 1.40 1.65 1.27 1.77 1.34 2.43 0.08 0.12 4.83 5.33 6.56 6.80 3.18 3.42 14.03 14.52 INCHES MIN 0.790 0.250 0.165 0.055 0.055 0.060 0.076 0.003 0.190 0.258 0.125 0.552 MAX 0.810 0.270 0.198 0.065 0.065 0.070 0.096 0.005 0.210 0.268 0.135 0.572 FEATURES: Gold Metalization Diffused Ballast Resistor DIM A B C D E G H J K N Q U 1 = BASE 2 = BASE 4 = COLLECTOR 3 = COLLECTOR 5 = EMITTER MAXIMUM RATINGS IC VCEO VCBO PDISS TJ TSTG θJC 9.0 A 30 V 45 V 97 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.8 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO BVCER ICEO hFE Cob PG ηC IC = 60 mA IC = 20 mA IE = 6.0 mA IC = 10 mA VCE = 28 V VCE = 20 V VCB = 28 V VCE = 28 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 30 45 4.0 V V V V 10 mA --40 6.5 45 pF dB % RBE = 50 Ω IC = 800 mA f = 1.0 MHz (EACH SIDE) Pout = 50 W Iq = 2X50 mA f = 860 MHz 40 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...