BSC042N03LSG Transistor Datasheet

BSC042N03LSG Datasheet, PDF, Equivalent


Part Number

BSC042N03LSG

Description

Power Transistor

Manufacture

Infineon Technologies

Total Page 10 Pages
Datasheet
Download BSC042N03LSG Datasheet


BSC042N03LSG
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OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
BSC042N03LS G
Product Summary
V DS
R DS(on),max
ID
30 V
4.2 m
93 A
PG-TDSON-8
Type
BSC042N03LS G
Package
PG-TDSON-8
Marking
042N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 0.99 - target datasheet
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=10 V, T A=25 °C,
R thJA=45 K/W2)
T C=25 °C
T C=25 °C
I D=40 A, R GS=25
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
page 1
Value
93
59
75
48
21
372
50
50
6
±20
Unit
A
mJ
kV/µs
V
2007-03-02

BSC042N03LSG
www.DataSheet4U.com
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=45 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC042N03LS G
Value
57
2.8
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area2)
-
-
-
- 2.2 K/W
- 62
- 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=30 A
-
5.2 6.5 m
V GS=10 V, I D=30 A
- 3.5 4.2
Gate resistance
RG
- 1.5 -
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
42
83
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 0.99 - target datasheet
page 2
2007-03-02


Features www.DataSheet4U.com BSC042N03LS G Opti MOS®3 Power-Transistor Features • Fa st switching MOSFET for SMPS • Optimi zed technology for DC/DC converters • Qualified according to JEDEC for targe t applications • N-channel • Logic level • Excellent gate charge x R DS( on) product (FOM) • Very low on-resis tance R DS(on) • Superior thermal res istance • Avalanche rated • Pb-free plating; RoHS compliant Type BSC042N03 LS G Package PG-TDSON-8 Marking 042N03L S 1) Product Summary V DS R DS(on),max ID 30 4.2 93 V mΩ A PG-TDSON-8 Max imum ratings, at T j=25 °C, unless oth erwise specified Parameter Continuous d rain current Symbol Conditions ID V GS= 10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C =100 °C V GS=10 V, T A=25 °C, R thJA= 45 K/W 2) Pulsed drain current3) Avalan che current, single pulse 4) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 93 59 75 48 Unit A 21 372 50 50 6 ±20 mJ kV/µs V I D,pulse I AS E AS dv /dt V GS T C=25 °C T .
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