Power Transistor. BSC042N03LSG Datasheet

BSC042N03LSG Transistor. Datasheet pdf. Equivalent


Infineon Technologies BSC042N03LSG
www.DataSheet4U.com
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
BSC042N03LS G
Product Summary
V DS
R DS(on),max
ID
30 V
4.2 m
93 A
PG-TDSON-8
Type
BSC042N03LS G
Package
PG-TDSON-8
Marking
042N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) J-STD20 and JESD22
Rev. 0.99 - target datasheet
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
dv /dt
V GS
V GS=10 V, T A=25 °C,
R thJA=45 K/W2)
T C=25 °C
T C=25 °C
I D=40 A, R GS=25
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
page 1
Value
93
59
75
48
21
372
50
50
6
±20
Unit
A
mJ
kV/µs
V
2007-03-02


BSC042N03LSG Datasheet
Recommendation BSC042N03LSG Datasheet
Part BSC042N03LSG
Description Power Transistor
Feature BSC042N03LSG; www.DataSheet4U.com BSC042N03LS G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for .
Manufacture Infineon Technologies
Datasheet
Download BSC042N03LSG Datasheet




Infineon Technologies BSC042N03LSG
www.DataSheet4U.com
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=45 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSC042N03LS G
Value
57
2.8
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area2)
-
-
-
- 2.2 K/W
- 62
- 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=30 A
-
5.2 6.5 m
V GS=10 V, I D=30 A
- 3.5 4.2
Gate resistance
RG
- 1.5 -
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
42
83
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 0.99 - target datasheet
page 2
2007-03-02



Infineon Technologies BSC042N03LSG
www.DataSheet4U.com
Parameter
Symbol Conditions
BSC042N03LS G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Q gs
Q g(th)
Q gd
Q sw
Qg
V plateau
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
Q oss
V DD=15 V, V GS=0 V
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
IS
I S,pulse
V SD
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
4) See figure 13 for more detailed information
5) See figure 16 for gate charge parameter definition
Rev. 0.99 - target datasheet
page 3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2400
930
49
6
4
24
4
- pF
-
-
- ns
-
-
-
7.4 - nC
3.9 -
3.5 -
7.0 -
15 -
3.1 - V
31 -
13 - nC
24 -
-
-
0.84
52 A
372
-V
- 20 nC
2007-03-02







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