2SC2500. C2500 Datasheet

C2500 2SC2500. Datasheet pdf. Equivalent


Toshiba C2500
www.DataSheet.co.kr
2SC2500
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2500
Strobe Flash Applications
Medium-Power Amplifier Applications
Unit: mm
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50
mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
30
30
10
6
2
5
0.5
900
150
55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2006-11-09
Datasheet pdf - http://www.DataSheet4U.net/


C2500 Datasheet
Recommendation C2500 Datasheet
Part C2500
Description 2SC2500
Feature C2500; www.DataSheet.co.kr 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2500 Str.
Manufacture Toshiba
Datasheet
Download C2500 Datasheet




Toshiba C2500
www.DataSheet.co.kr
Electrical Characteristics (Ta = 25°C)
2SC2500
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 6 V, IC = 0
VCEO
IC = 10 mA, IB = 0
VEBO
IC = 1 mA, IC = 0
hFE (1)
(Note 3)
VCE = 1 V, IC = 0.5 A
hFE (2)
VCE = 1 V, IC = 2 A
VCE (sat) IC = 2 A, IB = 50 mA
VBE VCE = 1 V, IC = 2 A
fT VCE = 1 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
― ― 100 nA
― ― 100 nA
10 ― ―
V
6 ―― V
140 600
70 200
0.2 0.5
V
0.86 1.5
V
150 MHz
27 pF
Note 3: hFE (1) classification A: 140 to 240, B: 200 to 330, C: 300 to 450, D: 420 to 600
Marking
C2500
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-09
Datasheet pdf - http://www.DataSheet4U.net/



Toshiba C2500
www.DataSheet.co.kr
5
50
40
4 30
3 20
IC – VCE
Common emitter
Ta = 25°C
2 10
IB = 5 mA
1
0
0
0 123 45 6 7
Collector-emitter voltage VCE (V)
hFE – IC
500
Ta = 100°C
300 25
25
100
50
20
0.05
0.1
0.3
Common emitter
VCE = 1 V
13
Collector current IC (A)
2SC2500
IC – VBE
5
Common emitter
VCE = 1 V
4
3
Ta = 100°C 25
25
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
VCE (sat) – IC
0.5 Common emitter
IC/IB = 40
0.3
Ta = 100°C
25
25
0.1
0.05
0.02
0.5
0.1 0.3
1
Collector current IC (A)
35
1000
800
600
PC – Ta
400
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe Operating Area
5 IC max (pulsed)**
3
IC max (continuous)
100 ms*
10 ms*
1 DC operation
(Ta = 25°C)
0.5
0.3 *: Single nonrepetitive
pulse Ta = 25°C
**: Pulse width 10 ms
Duty cycle 30%
Ta = 25°C
0.1 Curves must be derated
linearly with increase in
temperature.
0.05
0.3
1
3
10
Collector-emitter voltage VCE (V)
3 2006-11-09
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