2SD2374. D2374 Datasheet

D2374 2SD2374. Datasheet pdf. Equivalent


Panasonic Semiconductor D2374
wwwP.DoatwaSehreeTt4rUa.ncosmistors
2SD2374, 2SD2374A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1548 and 2SB1548A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD2374
base voltage 2SD2374A
VCBO
60
80
V
Collector to 2SD2374
emitter voltage 2SD2374A
VCEO
60
80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
6
5
3
25
2
150
–55 to +150
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD2374
current
2SD2374A
Emitter cutoff
2SD2374
current
2SD2374A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
Unit: mm
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
min typ max Unit
200
µA
200
300
µA
300
1 mA
60 V
70 250
10
1.8 V
1.2 V
30 MHz
0.5 µs
2.5 µs
0.4 µs
1


D2374 Datasheet
Recommendation D2374 Datasheet
Part D2374
Description 2SD2374
Feature D2374; www.DataSheet4U.com Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type F.
Manufacture Panasonic Semiconductor
Datasheet
Download D2374 Datasheet




Panasonic Semiconductor D2374
wwwP.DoatwaSehreeTt4rUa.ncosmistors
PC — Ta
40
(1) TC=Ta
36 (2) Without heat sink
(PC=2W)
32
28
(1)
24
20
16
12
8
4 (2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
6
TC=25˚C
5
60mA
4
3
IB=100mA
90mA
80mA
70mA
50mA
40mA
30mA
20mA
2 10mA
1
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2374, 2SD2374A
IC — VBE
8
VCE=4V
7 TC=25˚C
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
VCE(sat) — IC
10
IC/IB=8
TC=25˚C
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
hFE — IC
VCE=4V
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3
IC
1
t=1ms
1s 10ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 80 × 2mm Al heat sink
102 Ta=25˚C
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2







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