2SD2012. D2012 Datasheet

D2012 2SD2012. Datasheet pdf. Equivalent


Toshiba Semiconductor D2012
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
60
60
7
3
0.5
2.0
25
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
Note 1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-01


D2012 Datasheet
Recommendation D2012 Datasheet
Part D2012
Description 2SD2012
Feature D2012; TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applicat.
Manufacture Toshiba Semiconductor
Datasheet
Download D2012 Datasheet




Toshiba Semiconductor D2012
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 60 V, IE = 0
VEB = 7 V, IC = 0
IC = 50 mA, IB = 0
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 2 A
IC = 2 A, IB = 0.2 A
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Marking
2SD2012
Min Typ. Max Unit
― ― 100 μA
― ― 100 μA
60 ― ―
V
100 320
20 ― ―
0.4 1.0
V
0.75 1.0
V
3 MHz
35 pF
D2012
Part No. (or abbreviation code)
Lot No.
Note 2
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-01



Toshiba Semiconductor D2012
3.0
100
90
2.5
2.0
1.5
1.0
IC – VCE
80
70
60
50
40
30
20
IB = 10 mA
0.5 Common emitter
Tc = 25°C
0
01234567
Collector-emitter voltage VCE (V)
2SD2012
1000
500 Tc = 100°C
300 25
25
100
50
30
hFE – IC
Common emitter
VCE = 5 V
10
0.01
0.03 0.05 0.1
0.3 0.5 1
Collector current IC (A)
3
VCE (sat) – IC
Common emitter
1 IC/IB = 10
0.5
0.3
0.1
0.05
0.03
Tc = 100°C
25
25
0.01
0.01
0.03 0.05 0.1
0.3 0.5 1
Collector current IC (A)
35
30
(1)
25
PC – Ta
(1) Ta = Tc Infinite heat sink
(2) No heat sink
20
15
10
5
(2)
0
0 25 50 75 100 125 150 175
Ambient temperature Ta (°C)
IC – VBE
3.0
Common emitter
2.5 VCE = 5 V
2.0
1.5
1.0 Tc = 100°C 25 25
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Safe Operating Area
10
IC max (pulsed)*
5
3 IC max (continuous)
1 ms*
DC operation
Tc = 25°C
1
10 ms*
100 ms*
0.5
*: Single nonrepetitive pulse
0.3 Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VCEO max
0.1
1
3 5 10
30 50 100
300
Collector-emitter voltage VCE (V)
3 2009-12-01







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