DatasheetsPDF.com

D2012 Dataheets PDF



Part Number D2012
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SD2012
Datasheet D2012 DatasheetD2012 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature .

  D2012   D2012


TMPFBCxxxx D2012 TMPFBFxxxx


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)