D2012 2SD2012 Datasheet

D2012 Datasheet, PDF, Equivalent


Part Number

D2012

Description

2SD2012

Manufacture

Toshiba Semiconductor

Total Page 5 Pages
Datasheet
Download D2012 Datasheet


D2012
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A)
High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
60
60
7
3
0.5
2.0
25
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
Note 1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-01

D2012
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 60 V, IE = 0
VEB = 7 V, IC = 0
IC = 50 mA, IB = 0
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 2 A
IC = 2 A, IB = 0.2 A
VCE = 5 V, IC = 0.5 A
VCE = 5 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Marking
2SD2012
Min Typ. Max Unit
― ― 100 μA
― ― 100 μA
60 ― ―
V
100 320
20 ― ―
0.4 1.0
V
0.75 1.0
V
3 MHz
35 pF
D2012
Part No. (or abbreviation code)
Lot No.
Note 2
Note 2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-01


Features TOSHIBA Transistor Silicon NPN Triple Di ffused Type 2SD2012 Audio Frequency Pow er Amplifier Applications 2SD2012 Unit : mm • Low saturation voltage: VCE ( sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2 A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Rating s (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-bas e voltage Collector current Base curr ent Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO V EBO IC IB PC Tj Tstg 60 60 7 3 0.5 2.0 25 150 −55 to 150 V V V A A W °C C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.g. t he application of high TOSHIBA 2-10R1 A temperature/current/voltage and the significant change in temperature, etc. ) may cause this product to decrease in the Weight: 1.7 g (typ.) reliability significantly even if the operating co nditions (i.e. operating temperature/current/voltage, etc.) are within the abs.
Keywords D2012, datasheet, pdf, Toshiba Semiconductor, , 2SD2012, 2012, 012, 12, D201, D20, D2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)