D2374A

www.DataSheet4U.com Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A Unit: mm s Features q q q 15.0±0.5 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 80 60 80 6 5 3 25 2 150 –55 to +150 Unit 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2374 2SD2374A 2SD2374 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 2.54±0.3 3 5.08±0.5 2.6±0.1 V 0.55±0.15 emitter voltage 2SD2374A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 1 2 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 (TC=25˚C) Symbol ICES ICEO IEBO VCEO hFE1 hFE2 VBE VCE(sat) fT ton tstg tf * Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A...