N-Channel MOSFET. APM9988CO Datasheet

APM9988CO MOSFET. Datasheet pdf. Equivalent


Anpec Electronics APM9988CO
www.DataSheet4U.com
APM9988CO
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
20V/6A , RDS(ON)=16m(typ.) @ VGS=4.5V
RDS(ON)=19m(typ.) @ VGS=2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Power Management, Portable Equipment and
Battery Powered Systems
Top View of TSSOP 8
(1) (8)
DD
(4) (5)
G1 G2
Ordering and Marking Information
S1 S1
(2) (3)
S2 S2
(6) (7)
N-Channel MOSFET
APM9988C
Lead Free Code
Handling Code
Temp. Range
Package Code
APM9988C O :
APM9988C
XXXXX
Package Code
O : TSSOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
1
www.anpec.com.tw


APM9988CO Datasheet
Recommendation APM9988CO Datasheet
Part APM9988CO
Description Dual N-Channel MOSFET
Feature APM9988CO; www.DataSheet4U.com APM9988CO Dual N-Channel Enhancement Mode MOSFET Features • • • • 20V/6A , RDS.
Manufacture Anpec Electronics
Datasheet
Download APM9988CO Datasheet




Anpec Electronics APM9988CO
www.DataSheet4U.com
APM9988CO
Absolute
Maximum
Ratings
(T =
A
25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note:
*Surface Mounted on 1in2 pad area, t 10sec.
VGS=4.5V
TA=25°C
TA=100°C
Rating
20
±8
6
20
1.4
150
-55 to 150
1.25
0.5
100
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM9988CO
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V, IDS=250µA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VGS=±8V, VDS=0V
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=5.2A
ISD=0.5A, VGS=0V
VDS=10V, VGS=4.5V,
IDS=6A
20
0.5
1
30
0.7 1
±10
16 20
19 25
0.7 1.3
16.5 21
4.5
4.5
V
µA
V
µA
m
V
nC
Copyright © ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
2
www.anpec.com.tw



Anpec Electronics APM9988CO
www.DataSheet4U.com
APM9988CO
Electrical Characteristics (Cont.)
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=10V, RL=10,
IDS=1A, VGEN=4.5V,
RG=6
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=6A, dISD/dt=100A/µs
Notes:
a : Pulse test ; pulse width300µs, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
APM9988CO
Min. Typ. Max.
2
1155
200
90
7
10
47
24
25
9
14
19
86
45
Unit
pF
ns
ns
nC
Copyright © ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
3
www.anpec.com.tw







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