Transistors
2SC1473, 2SC1473A
Silicon NPN triple diffusion planar type
For general amplification 2SC1473 complementary ...
Transistors
2SC1473, 2SC1473A
Silicon
NPN triple diffusion planar type
For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767
5.0±0.2
Unit: mm 4.0±0.2
5.1±0.2
■ Features
High collector-emitter voltage (Base open) VCEO High transition frequency fT
0.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage 2SC1473 VCBO
250
V
c type (Emitter open)
2SC1473A
300
n d tage. ued Collector-emitter voltage 2SC1473 VCEO
200
2.3±0.2
V
le s ntin (Base open)
2SC1473A
300
a elifecyc disco Emitter-base voltage (Collector open) VEBO
7
V
n u t ed, Collector current
IC
70
mA
duc typ Peak collector current
ICP
100
mA
te tin ur Pro tinued Collector power dissipation
PC
750
mW
fo on Junction temperature
Tj
150
°C
wing disc Storage temperature
Tstg −55 to +150 °C
0.45+–00..115 2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23 EIAJ: SC-43A
1: Emitter 2: Collector 3: Base TO-92-B1 Package
ain onludes foell,oplaned ■ Electrical Characteristics Ta = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
Min Typ Max Unit
c tinued ance Collector-emitter voltage 2SA1473 VCEO IC = 100 µA, IB = 0
200
V
M is con inten (Base open)
2SA1473A
300
/Dis ma Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
7
D ance type, Collector-emitter cutoff 2SA1473 ICEO VCE = 120 V, Ta = 60°C, IB = 0
ten ce current (Base open)
2SA1473A
VCE = 120 V, IB = 0
Main t...
