C1473 2SC1473 Datasheet

C1473 Datasheet, PDF, Equivalent


Part Number

C1473

Description

2SC1473

Manufacture

Panasonic Semiconductor

Total Page 3 Pages
Datasheet
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C1473
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2SC1473, 2SC1473A
Silicon NPN triple diffusion planer type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
s Features
q High collector to emitter voltage VCEO.
q High transition frequency fT.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SC1473
base voltage 2SC1473A
Collector to 2SC1473
emitter voltage 2SC1473A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
250
300
200
300
7
100
70
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
current
Collector to emitter
voltage
2SC1473
2SC1473A
2SC1473
2SC1473A
ICEO
VCEO
VCE = 120V, IB = 0
VCE = 120V, IB = 0
IC = 100µA, IC = 0
1
µA
1
200
V
300
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE*
VCE(sat)
fT
Cob
IE = 1µA, IC = 0
VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
7
30
50
V
220
1.2 V
80 MHz
10 pF
*hFE Rank classification
Rank
P
hFE 30 ~ 100
Q
60 ~ 150
R
100 ~ 220
1

C1473
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PC — Ta
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — IB
120
VCE=10V
Ta=25˚C
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base current IB (mA)
hFE — IC
360
VCE=10V
300
240
180
Ta=75˚C
25˚C
120
–25˚C
60
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
IC — VCE
120
1.8mA
Ta=25˚C
1.6mA
100
1.4mA
IB=2mA
1.2mA
1.0mA
80 0.8mA
0.6mA
60
0.4mA
40
0.2mA
20
0
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3 25˚C
0.1 –25˚C
0.03
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
fT — IE
160
VCB=10V
Ta=25˚C
140
120
100
80
60
40
20
0
–1 –3 –10 –30 –100
Emitter current IE (mA)
2SC1473, 2SC1473A
IC — VBE
120
VCE=10V
25˚C
100
Ta=75˚C –25˚C
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
IB — VBE
3.0
VCE=10V
Ta=25˚C
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0
Base to emitter voltage VBE (V)
Cob — VCB
10
IE=0
9 f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
1
3
10 30
100
Collector to base voltage VCB (V)
2


Features www.DataSheet4U.com Transistor 2SC1473 , 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC147 3A complementary to 2SA1767 Unit: mm 5. 0±0.2 4.0±0.2 s Features q q s Abso lute Maximum Ratings Parameter Collecto r to base voltage Collector to 2SC1473 2SC1473A 2SC1473 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (Ta=25˚C) Ratings 2 50 300 200 300 7 100 70 750 150 –55 ~ +150 Unit V 0.45 –0.1 1.27 +0.2 13. 5±0.5 High collector to emitter volta ge VCEO. High transition frequency fT. 5.1±0.2 0.45 –0.1 1.27 +0.2 emit ter voltage 2SC1473A Emitter to base vo ltage Peak collector current Collector current Collector power dissipation Jun ction temperature Storage temperature V V mA mA mW ˚C ˚C 2.3±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Bas e JEDEC:TO–92 EIAJ:SC–43A s Electr ical Characteristics Parameter Collecto r cutoff current Collector to emitter v oltage 2SC1473 2SC1473A 2SC1473 2SC1473A (Ta=25˚C) Symbol ICEO VCEO VEBO hFE* VCE.
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