Document
SSM3K119TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K119TU
Power Management Switch Applications High Speed Switching Applications
• 1.8 V drive • Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.8V)
Ron = 90 mΩ (max) (@VGS = 2.5V) Ron = 74 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage Gate–source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
30
V
VGSS
± 12
V
ID
2.5 A
IDP
5.0
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Note 1: Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015
1
2
3
2.0±0.1 0.65±0.05
0.166±0.05
0.7±0.05
1: Gate 2: Source 3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time Turn-off time
Drain–source forward voltage
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = 1 mA, VGS = 0
30
⎯
⎯
V
V (BR) DSX ID = 1 mA, VGS = –12 V
18
⎯
⎯
V
IDSS
VDS = 30 V, VGS = 0
⎯
⎯
1
μA
IGSS
VGS = ± 12 V, VDS = 0
⎯
⎯
±1
μA
Vth
VDS = 3 V, ID = 1 mA
0.4
⎯
1.0
V
⏐Yfs⏐
VDS = 3 V, ID = 2 A
(Note3) 3.8
7.7
⎯
S
RDS (ON)
ID = 2.0 A, VGS = 4.0 V ID = 1.0 A, VGS = 2.5 V
(Note3)
⎯
55
74
(Note3)
⎯
67
90
mΩ
ID = 0.5 A, VGS = 1.8 V
(Note3)
⎯
84
134
Ciss Coss Crss
VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz
⎯
270
⎯
pF
⎯
56
⎯
pF
⎯
47
⎯
pF
ton
VDD = 10 V, ID = 2 A,
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
20
⎯
ns
⎯
31
⎯
VDSF
ID = − 2.5 A, VGS = 0 V
(Note3) ⎯ – 0.85 – 1.2
V
Note3: Pulse test
Start of commercial production
2006-03
1
2014-03-01
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V IN
0
10 μs
VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C
RG
OUT
VDD
(c) VOUT
SSM3K119TU
2.5 V
0V VDD VDS (ON)
10%
90%
10%
90%
tr
tf
ton
toff
Marking
3
KKA
Equivalent Circuit (top view)
3
1
2
1
2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
2
2014-03-01
Drain current ID (A)
ID – VDS
5 10 V 4.0 V 2.5 V
4
3
1.8 V
2 VGS = 1.5 V
1
Common Source
Ta = 25°C
0
0
0.2
0.4
0.6
0.8
1
Drain–source voltage VDS (V)
Drain current ID (A)
SSM3K119TU
ID – VGS
10 Common Source VDS = 3 V
1
0.1 0.01 0.001
Ta = 100 °C
25 °C − 25 °C
0.0001 0
1.0
2.0
Gate–source voltage VGS (V)
Drain–source ON-resistance RDS (ON) (mΩ)
RDS (ON) – VGS
200
ID = 0.5 A
Common Source
150
Ta = 25°C
100
Ta = 100 °C
50
25 °C
− 25 °C
0
0
2
4
6
8
10
Gate–source voltage VGS (V)
RDS (ON) – Ta
300 Common Source
250
200
150
0.5 A / 1.8 V
1.0 A / 2.5 V 100
50
ID = 2.0 A / VGS = 4.0 V
0
−50
0
50
100
150
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Drain–source ON-resistance RDS (ON) (mΩ)
RDS (ON) – ID
200 Common Source Ta = 25°C
150
100 1.8 V
2.5 V
50
VGS = 4.0 V
0
0
1
2
3
4
5
Drain current ID (A)
Vth – Ta
1.0
0.5
Common source
VDS = 3 V
ID = 1 mA
0
−50
0
50
100
150
Ambient temperature Ta (°C)
Drain–source on-resis.