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SSM3K119TU Dataheets PDF



Part Number SSM3K119TU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM3K119TU DatasheetSSM3K119TU Datasheet (PDF)

SSM3K119TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K119TU Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.8V) Ron = 90 mΩ (max) (@VGS = 2.5V) Ron = 74 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range .

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SSM3K119TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K119TU Power Management Switch Applications High Speed Switching Applications • 1.8 V drive • Low ON-resistance: Ron = 134 mΩ (max) (@VGS = 1.8V) Ron = 90 mΩ (max) (@VGS = 2.5V) Ron = 74 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 30 V VGSS ± 12 V ID 2.5 A IDP 5.0 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm2 ) Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 1: Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Characteristic Drain–source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Drain–source forward voltage Symbol Test Condition Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 30 ⎯ ⎯ V V (BR) DSX ID = 1 mA, VGS = –12 V 18 ⎯ ⎯ V IDSS VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA IGSS VGS = ± 12 V, VDS = 0 ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V ⏐Yfs⏐ VDS = 3 V, ID = 2 A (Note3) 3.8 7.7 ⎯ S RDS (ON) ID = 2.0 A, VGS = 4.0 V ID = 1.0 A, VGS = 2.5 V (Note3) ⎯ 55 74 (Note3) ⎯ 67 90 mΩ ID = 0.5 A, VGS = 1.8 V (Note3) ⎯ 84 134 Ciss Coss Crss VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 270 ⎯ pF ⎯ 56 ⎯ pF ⎯ 47 ⎯ pF ton VDD = 10 V, ID = 2 A, toff VGS = 0 to 2.5 V, RG = 4.7 Ω ⎯ 20 ⎯ ns ⎯ 31 ⎯ VDSF ID = − 2.5 A, VGS = 0 V (Note3) ⎯ – 0.85 – 1.2 V Note3: Pulse test Start of commercial production 2006-03 1 2014-03-01 Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V IN 0 10 μs VDD = 10 V RG = 4.7 Ω Duty ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C RG OUT VDD (c) VOUT SSM3K119TU 2.5 V 0V VDD VDS (ON) 10% 90% 10% 90% tr tf ton toff Marking 3 KKA Equivalent Circuit (top view) 3 1 2 1 2 Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 Drain current ID (A) ID – VDS 5 10 V 4.0 V 2.5 V 4 3 1.8 V 2 VGS = 1.5 V 1 Common Source Ta = 25°C 0 0 0.2 0.4 0.6 0.8 1 Drain–source voltage VDS (V) Drain current ID (A) SSM3K119TU ID – VGS 10 Common Source VDS = 3 V 1 0.1 0.01 0.001 Ta = 100 °C 25 °C − 25 °C 0.0001 0 1.0 2.0 Gate–source voltage VGS (V) Drain–source ON-resistance RDS (ON) (mΩ) RDS (ON) – VGS 200 ID = 0.5 A Common Source 150 Ta = 25°C 100 Ta = 100 °C 50 25 °C − 25 °C 0 0 2 4 6 8 10 Gate–source voltage VGS (V) RDS (ON) – Ta 300 Common Source 250 200 150 0.5 A / 1.8 V 1.0 A / 2.5 V 100 50 ID = 2.0 A / VGS = 4.0 V 0 −50 0 50 100 150 Ambient temperature Ta (°C) Gate threshold voltage Vth (V) Drain–source ON-resistance RDS (ON) (mΩ) RDS (ON) – ID 200 Common Source Ta = 25°C 150 100 1.8 V 2.5 V 50 VGS = 4.0 V 0 0 1 2 3 4 5 Drain current ID (A) Vth – Ta 1.0 0.5 Common source VDS = 3 V ID = 1 mA 0 −50 0 50 100 150 Ambient temperature Ta (°C) Drain–source on-resis.


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