SSM3K15FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FV
High Speed Switching Applications Analog...
SSM3K15FV
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM3K15FV
High Speed Switching Applications Analog Switch Applications
Unit: mm
0.22±0.05
0.32±0.05
Optimum for high-density mounting in small packages Low on-resistance
: RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
1.2±0.05 0.8±0.05 0.4 0.4
1.2±0.05 0.8±0.05
1 3
Characteristics
Symbol
Rating
Unit
2
0.13±0.05
Drain-source voltage Gate-source voltage
Drain current
Power dissipation Channel temperature Storage temperature
VDS
30
V
VGSS
±20
V
DC
ID
Pulse
IDP
100 mA
200
PD (Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
0.5±0.05
VESM
1. Gate 2. Source 3. Drain
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
-
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JEITA
-
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
TOSHIBA
2-1L1B
Weight: 1.5 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Marking
3
0.5mm 0.45m...