Document
SSM3K15FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FV
High Speed Switching Applications Analog Switch Applications
Unit: mm
0.22±0.05
0.32±0.05
• Optimum for high-density mounting in small packages • Low on-resistance
: RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
1.2±0.05 0.8±0.05 0.4 0.4
1.2±0.05 0.8±0.05
1 3
Characteristics
Symbol
Rating
Unit
2
0.13±0.05
Drain-source voltage Gate-source voltage
Drain current
Power dissipation Channel temperature Storage temperature
VDS
30
V
VGSS
±20
V
DC
ID
Pulse
IDP
100 mA
200
PD (Note 1)
150
mW
Tch
150
°C
Tstg
−55 to 150
°C
0.5±0.05
VESM
1. Gate 2. Source 3. Drain
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
-
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
JEITA
-
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
TOSHIBA
2-1L1B
Weight: 1.5 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)
Marking
3
0.5mm 0.45mm 0.45mm
0.4mm
Equivalent Circuit
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance
Drain-source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time Turn-off time
Symbol
Test Condition
IGSS V (BR) DSS
IDSS Vth ⏐Yfs⏐
RDS (ON)
Ciss Crss Coss ton toff
VGS = ±16 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz
VDD = 5 V, ID = 10 mA, VGS = 0~5 V
SSM3K15FV
Min Typ. Max Unit
⎯
⎯
±1
μA
30
⎯
⎯
V
⎯
⎯
1
μA
0.8
⎯
1.5
V
25
⎯
⎯
mS
⎯
2.2
4.0
Ω
⎯
4.0
7.0
⎯
7.8
⎯
pF
⎯
3.6
⎯
pF
⎯
8.8
⎯
pF
⎯
50
⎯
ns
⎯ 180 ⎯
Switching Time Test Circuit
(a) Test circuit
(b) VIN
5V Input
Output
5V
90%
0
10 μs
VDD = 5 V Duty <= 1% Input: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C
Precaution
50 Ω
RL
VDD (c) VOUT
0V VDD
VDS (ON)
10%
90%
10%
tr
tf
ton
toff
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration when using the device.
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2007-11-01
Drain current ID (mA)
250 10 4
200 150 100
ID – VDS
Common Source Ta = 25°C 3
2.7
2.5 2.3
50 VGS = 2.1 V
0
0
0.5
1
1.5
2
Drain-source voltage VDS (V)
Drain current ID (mA)
SSM3K15FV
1000 Common Source VDS = 3 V
100
ID – VGS
Ta = 100°C 10
25°C 1
−25°C
0.1
0.01
0
1
2
3
4
Gate-source voltage VGS (V)
Drain-source on resistance RDS (ON) (Ω)
RDS (ON) – ID
10 Common Source Ta = 25°C
8
6 VGS = 2.5 V
4
4V 2
0
0
40
80
120
160
200
Drain current ID (mA)
Drain-source on resistance RDS (ON) (Ω)
RDS (ON) – VGS
6 Common Source
ID = 10 mA 5
4
Ta = 100°C 3
25°C 2
−25°C 1
0
0
2
4
6
8
10
Gate-source voltage VGS (V)
Drain-source on resistance RDS (ON) (Ω)
RDS (ON) – Ta
8 Common Source
7 ID = 10 mA
6
5 VGS = 2.5 V
4
3
4V
2
1
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Vth – Ta
2 Common Source
1.8 ID = 0.1 mA VDS = 3 V
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
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2007-11-01
Forward transfer admittance ⏐Yfs⏐ (mS)
1000
Common Source 500 VDS = 3 V 300 Ta = 25°C
⎪Yfs⎪ – ID
100
50 30
10
5 3
1
1
10
100
Drain current ID (mA)
1000
Drain reveres current IDR (mA)
SSM3K15FV
IDR – VDS
250 Common Source
VGS = 0 V 200 Ta = 25°C
D
150 G
100
IDR S
50
0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4
Drain-source voltage VDS (V)
Switchi.