DatasheetsPDF.com

SSM3K15FV Dataheets PDF



Part Number SSM3K15FV
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet SSM3K15FV DatasheetSSM3K15FV Datasheet (PDF)

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm 0.22±0.05 0.32±0.05 • Optimum for high-density mounting in small packages • Low on-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) 1.2±0.05 0.8±0.05 0.4 0.4 1.2±0.05 0.8±0.05 1 3 Characteristics Symbol Rating Unit 2 0.13±0.05 Drain-source voltage Gate-source vo.

  SSM3K15FV   SSM3K15FV


Document
SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm 0.22±0.05 0.32±0.05 • Optimum for high-density mounting in small packages • Low on-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) 1.2±0.05 0.8±0.05 0.4 0.4 1.2±0.05 0.8±0.05 1 3 Characteristics Symbol Rating Unit 2 0.13±0.05 Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature VDS 30 V VGSS ±20 V DC ID Pulse IDP 100 mA 200 PD (Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C 0.5±0.05 VESM 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC - temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA - operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-1L1B Weight: 1.5 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm) Marking 3 0.5mm 0.45mm 0.45mm 0.4mm Equivalent Circuit 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol Test Condition IGSS V (BR) DSS IDSS Vth ⏐Yfs⏐ RDS (ON) Ciss Crss Coss ton toff VGS = ±16 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 30 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4 V ID = 10 mA, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 5 V, ID = 10 mA, VGS = 0~5 V SSM3K15FV Min Typ. Max Unit ⎯ ⎯ ±1 μA 30 ⎯ ⎯ V ⎯ ⎯ 1 μA 0.8 ⎯ 1.5 V 25 ⎯ ⎯ mS ⎯ 2.2 4.0 Ω ⎯ 4.0 7.0 ⎯ 7.8 ⎯ pF ⎯ 3.6 ⎯ pF ⎯ 8.8 ⎯ pF ⎯ 50 ⎯ ns ⎯ 180 ⎯ Switching Time Test Circuit (a) Test circuit (b) VIN 5V Input Output 5V 90% 0 10 μs VDD = 5 V Duty <= 1% Input: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C Precaution 50 Ω RL VDD (c) VOUT 0V VDD VDS (ON) 10% 90% 10% tr tf ton toff Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration when using the device. 2 2007-11-01 Drain current ID (mA) 250 10 4 200 150 100 ID – VDS Common Source Ta = 25°C 3 2.7 2.5 2.3 50 VGS = 2.1 V 0 0 0.5 1 1.5 2 Drain-source voltage VDS (V) Drain current ID (mA) SSM3K15FV 1000 Common Source VDS = 3 V 100 ID – VGS Ta = 100°C 10 25°C 1 −25°C 0.1 0.01 0 1 2 3 4 Gate-source voltage VGS (V) Drain-source on resistance RDS (ON) (Ω) RDS (ON) – ID 10 Common Source Ta = 25°C 8 6 VGS = 2.5 V 4 4V 2 0 0 40 80 120 160 200 Drain current ID (mA) Drain-source on resistance RDS (ON) (Ω) RDS (ON) – VGS 6 Common Source ID = 10 mA 5 4 Ta = 100°C 3 25°C 2 −25°C 1 0 0 2 4 6 8 10 Gate-source voltage VGS (V) Drain-source on resistance RDS (ON) (Ω) RDS (ON) – Ta 8 Common Source 7 ID = 10 mA 6 5 VGS = 2.5 V 4 3 4V 2 1 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Gate threshold voltage Vth (V) Vth – Ta 2 Common Source 1.8 ID = 0.1 mA VDS = 3 V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2007-11-01 Forward transfer admittance ⏐Yfs⏐ (mS) 1000 Common Source 500 VDS = 3 V 300 Ta = 25°C ⎪Yfs⎪ – ID 100 50 30 10 5 3 1 1 10 100 Drain current ID (mA) 1000 Drain reveres current IDR (mA) SSM3K15FV IDR – VDS 250 Common Source VGS = 0 V 200 Ta = 25°C D 150 G 100 IDR S 50 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 Drain-source voltage VDS (V) Switchi.


SSM3K15F SSM3K15FV SSM3K15TE


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)