SSM3K15FV

SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Unit: mm 0.22±0.05 0.32±0.05 Optimum for high-density mounting in small packages Low on-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) 1.2±0.05 0.8±0.05 0.4 0.4 1.2±0.05 0.8±0.05 1 3 Characteristics Symbol Rating Unit 2 0.13±0.05 Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature VDS 30 V VGSS ±20 V DC ID Pulse IDP 100 mA 200 PD (Note 1) 150 mW Tch 150 °C Tstg −55 to 150 °C 0.5±0.05 VESM 1. Gate 2. Source 3. Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC - temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA - operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-1L1B Weight: 1.5 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm) Marking 3 0.5mm 0.45m...