SPN1423A
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN1423A is the N-Channel logic enhancement mode power field...
SPN1423A
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN1423A is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES 20V/4.0A,RDS(ON)=80mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=90mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=110mΩ@VGS=1.8V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-353 ( SC – 70 ) package design
PIN CONFIGURATION ( SOT-353 ; SC-70 )
PART MARKING
2020/04/10 Ver.5
Page 1
SPN1423A
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 2 3
1,4,5
Symbol G S D
Description Gate Source Drain
ORDERING INFORMATION
Part Number
Package
SPN1423AS35RGB
SOT-353
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN1423AS35RGB : Tape Reel ; Pb – Free ; Halogen – Free
Part Marking 2A
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Dr...