600V N-Channel Power MOSFET
TSM1N60L
600V N-Channel Power MOSFET
TO-252
TO-251
Pin Definition: 1. Gate
2. Drain 3. Source
PRODUCT SUMMARY
VDS (...
Description
TSM1N60L
600V N-Channel Power MOSFET
TO-252
TO-251
Pin Definition: 1. Gate
2. Drain 3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 12 @ VGS =10V
ID (A)
1
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to ...
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