N-Channel MOSFET. 10N60C Datasheet

10N60C MOSFET. Datasheet pdf. Equivalent


Fairchild Semiconductor 10N60C
www.DataSheet4U.com
FQP10N60C/FQPF10N60C
600V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 9.5A, 600V, RDS(on) = 0.73@VGS = 10 V
• Low gate charge ( typical 44 nC)
• Low Crss ( typical 18 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP10N60C FQPF10N60C
600
9.5 9.5 *
3.3 3.3 *
38 38 *
± 30
700
9.5
15.6
4.5
156 50
1.25 0.4
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP10N60C
0.8
0.5
62.5
FQPF10N60C
2.5
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003


10N60C Datasheet
Recommendation 10N60C Datasheet
Part 10N60C
Description 600V N-Channel MOSFET
Feature 10N60C; www.DataSheet4U.com FQP10N60C/FQPF10N60C QFET FQP10N60C/FQPF10N60C 600V N-Channel MOSFET General D.
Manufacture Fairchild Semiconductor
Datasheet
Download 10N60C Datasheet




Fairchild Semiconductor 10N60C
www.DataSheet4U.com
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.7
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
VGS = 10 V, ID = 4.75 A
-- 0.6 0.73
VDS = 40 V, ID = 4.75 A (Note 4) --
8.0
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1570 2040
-- 166 215
-- 18
24
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 9.5A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 9.5A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
23
69
144
77
44
6.7
18.5
55
150
300
165
57
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 9.5
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 38
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A
-- -- 1.4
trr Reverse Recovery Time
VGS = 0 V, IS = 9.5 A,
-- 420
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) --
4.2
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 9.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
Rev. B, October 2003



Fairchild Semiconductor 10N60C
www.DataSheet4U.com
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101 6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
100
Notes :
1. 250μ s Pulse Test
2. TC = 25
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.0
1.5
VGS = 10V
1.0
0.5 VGS = 20V
0.0
0
Note : TJ = 25
5 10 15 20 25 30 35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
C
oss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
C =C
rss gd
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1. V = 0V
2. 25GS0μ s Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10
V = 300V
DS
V = 480V
8 DS
6
4
2
Note : ID = 9.5A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, October 2003







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