TSC5305D

www.DataSheet4U.com Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A Features Built-in free-wheeling diode makes efficient anti saturation operation. No need to interest an hfe value because of low variable storage-time spread even though comer spirit product. Low base drive requirement. Suitable for half bridge light ballast applications. Ordering Information Part No. TSC5305DCZ TSC5305DCM Packing Tube T&R Package TO-220 TO-263 Block Diagram Structure Silicon triple diffused type. NPN silicon transistor with Diode Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Pulse Total Power Dissipation (Tc=25 C) Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note: 1. Single pulse, Pw = 300uS, Duty <= 2% o Symbol VCBO VCEO VEBO IC Limit 750V 400V 10 5 10 Unit V V V A IB 2 4 A PD TJ TSTG RΘjc RΘja 75 +150 - 65 to +150 1.65 65 o o W o o C C C/W C/W TS5305D Preliminary 1-1 2004/09 rev. B www.DataSheet4U.com Preliminary Electrical Characteristics Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Cu...