W80NF55-08

www.DataSheet4U.com N-CHANNEL 55V - 0.0065Ω - 80A TO-247 STripFET™ POWER MOSFET TYPE STW80NF55-08 s s s s STW80NF55-08 VDSS 55 V RDS(on) < 0.008 Ω ID 80 A TYPICAL RDS(on) = 0.0065Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE 3 2 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC-AC & DC-DC CONVERTERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (*) ID IDM (l) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ±20 80 80 320 300 2 870 –65 to 175 175 (1) Starting T j = 25°C, I D = 40A, VDD = 40V (*) Current Limited by wire bonding Unit V V V A A A W W/°C mJ °C °C (q) Pulse width limited by safe operating area September 2002 1/8 www.DataSheet4U.com STW80NF55-08 THERMAL DATA Rthj-case Rthj-amb Tl T...