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IHW15N120R Dataheets PDF



Part Number IHW15N120R
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Reverse Conducting IGBT
Datasheet IHW15N120R DatasheetIHW15N120R Datasheet (PDF)

www.DataSheet4U.com Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qua.

  IHW15N120R   IHW15N120R


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www.DataSheet4U.com Soft Switching Series IHW15N120R q C Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: • Inductive Cooking • Soft Switching Applications Type IHW20N120R VCE 1200V IC 20A VCE(sat),Tj=25°C 1.65V Tj,max 175°C Marking H20R120 Package PG-TO-247-3-21 G E PG-TO-247-3-21 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s IFSM Symbol VCE IC Value 1200 30 15 45 45 20 13 30 50 130 120 ±20 ±25 405 -40...+175 -55...+175 260 W °C V Unit V A ICpul s IF VGE 1 J-STD-020 and JESD-022 1 Rev. 2.1 July 06 Power Semiconductors www.DataSheet4U.com Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 ° C T j =1 2 5 ° C T j =1 7 5 ° C Diode forward voltage VF V G E = 0V , I F = 7 .5 A T j =2 5 ° C T j =1 5 0 ° C T j =1 7 5 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 5m A, VCE=VGE V C E = 12 0 0V , V G E = 0V T j =2 5 ° C T j =1 7 5 ° C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A Symbol Conditions RthJA RthJCD RthJC Symbol Conditions IHW15N120R q Max. Value 0.38 0.38 40 Unit K/W Value min. 1200 5.1 Typ. 1.65 2.0 2.0 1.25 1.3 1.3 5.8 max. 1.85 1.4 6.4 Unit V µA 8.5 none 5 2500 100 nA S Ω Power Semiconductors 2 Rev. 2.1 July 06 www.DataSheet4U.com Soft Switching Series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 96 0 V, I C =1 5 A V G E = 15 V IHW15N120R q 1114 62 53 61 13 nC nH pF Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 60 0 V, I C = 1 5 A V G E = 0 /1 5 V, R G = 54 Ω , 2) L σ =1 8 0n H, 2) C σ = 3 9p F 455 76 1.1 1.1 mJ ns Symbol Conditions Value min. Typ. max. Unit Switching Characteristic, Inductive Load, at Tj=175 °C Parameter IGBT Characteristic Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(off) tf Eon Eoff Ets T j =1 7 5 ° C V C C = 60 0 V, I C = 1 5 A, V G E = 0 / 15 V , RG= 54Ω, 2) L σ =1 8 0n H , 2) C σ =3 9 pF 566 119 1.8 1.8 mJ ns Symbol Conditions Value min. Typ. max. Unit 2) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.1 July 06 Power Semiconductors www.DataSheet4U.com Soft Switching Series IHW15N120R q tp=1µs 10µs 40A TC=80°C TC=110°C 20µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 50µs 20A Ic 1A 500µs 5ms 0A 10Hz DC 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for hard switching (turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 54.1Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 350W 300W 40A IC, COLLECTOR CURRENT Ptot, DISSIPATED POWER 250W 200W 150W 100W 50W 0W 25°C 30A 20A 10A 50°C 75°C 100°C 125°C 150°C 0A 25°C 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (.


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