IHW30N100R

www.DataSheet4U.com Soft Switching Series IHW30N100R q C Reverse Conducting IGBT with monolithic body diode Features: 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175°C Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Applications: Microwave Oven Soft Switching Applications Type IHW30N100R VCE 1000V IC 30A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking H30R100 Package PG-TO-247-3-21 G E PG-TO-247-3-21 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Ptot Tj Tstg IFpul s VGE ICpul s IF 60 30 90 ±20 ±25 412 -40...+175 -55...+175 260 W °C °C V Symbol VCE IC 60 30 90 90 Value 1000 Unit V A 1 J-STD-020 and JESD-022 1 Rev. 2 July 06 Power Semiconductors www.DataSheet4U.com Soft Switc...