STA124S

www.DataSheet4U.com Semiconductor STA124S PNP Silicon Transistor Features Suitable for low voltage large current drivers High DC current gain and large current capability Complementary pair with STD123S Ordering Information Type NO. STA124S Marking 124 Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 2.9±0.1 KST-2100-000 0.124 +0.05 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 0~0.1 -0.03 1 www.DataSheet4U.com STA124S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : Package mounted on 99.5% alumina 10× 8× 0.1mm (Ta=25° C) Symbol VCBO VCEO VEBO IC PC * Ratings -15 -12 -6.5 -1 350 150 -55~150 Unit V V V A mW °C °C Tj T stg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE VCE(sat) fT C ob Test Condition IC=-50µA, I E =0 IC=-1mA, IB=0 IE =-50µA, IC =0 VCB=-15V, I E =0 VEB =-6V, IC =0 VCE=-1V, IC =-100mA IC=-500mA, IB =-50mA VCE=-5V, IC =-50mA VCB=-10V, I E =0, f=1MHz Min. -15 -12 -6.5 200 - Typ. -0.2 260 5 Max. -0.1 -0.1 450 -0.4...