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GS841E18AT

GSI Technology

256K x 18 Sync Cache Tag

www.DataSheet4U.com GS841E18AT/B-180/166/150/130/100 TQFP, BGA Commercial Temp Industrial Temp Features • 3.3 V +10%/–5...


GSI Technology

GS841E18AT

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www.DataSheet4U.com GS841E18AT/B-180/166/150/130/100 TQFP, BGA Commercial Temp Industrial Temp Features 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O supply Dual Cycle Deselect (DCD) Intergrated data comparator for Tag RAM application FT mode pin for flow through or pipeline operation LBO pin for Linear or Interleave (PentiumTM and X86) Burst mode Synchronous address, data I/O, and control inputs Synchronous Data Enable (DE) Asynchronous Output Enable (OE) Asynchronous Match Output Enable (MOE) Byte Write (BWE) and Global Write (GW) operation Three chip enable signals for easy depth expansion Internal self-timed write cycle JTAG Test mode conforms to IEEE standard 1149.1 JEDEC-standard 100-lead TQFP package and 119-BGA Pb-Free 100-lead TQFP package available 256K x 18 Sync Cache Tag 180 MHz–100 MHz 3.3 V VDD 3.3 V and 2.5 V I/O Output registers and the Match output register are provided and controlled by the FT mode pin (Pin 14). Through use of the FT mode pin, I/O registers can be programmed to perform pipeline or flow through operation. Flow Through mode reduces latency. Byte write operation is performed by using Byte Write Enable (BWE) input combined with two individual byte write signals BW1-2. In addition, Global Write (GW) is available for writing all bytes at one time. Compare cycles begin as a read cycle with output disabled so that compare data can be loaded into the data input register. The comparator compares the read data w...




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