BTC1815A3

www.DataSheet4U.com CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C204A3-T Issued Date : 2003.08.26 Revised Date : Page No. : 1/4 BTC1815A3 Description The BTC1815A3 is designed for use in driver stage of AF amplifier and low speed switching. Features High voltage and high current : VCEO=50V(min), IC=150mA(max) High HFE and excellent linearity Complementary to BTA1015A3 Symbol BTC1815A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @Ta=25℃ Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature BTC1815A3 Symbol VCBO VCEO VEBO IC IB Pd RθJA Tj Tstg Limits 60 50 5 150 50 400 250 125 -55~+125 Unit V V V mA mA mW °C/W °C °C CYStek Product Specification www.DataSheet4U.com CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE1 hFE2 fT Cob Min. 60 50 5 70 25 80 Typ. 100 Max. 100 100 0.25 1.0 700 3.5 Unit V V V nA nA V V MHz pF Spec. No. : C204A3-T Issued Date : 2003.08.26 Revised Date : Page No. : 2/4 Test Conditions IC=100µA IC=1mA IE=10µA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=1mA VCB=10V, IE=0,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range O 70~140 Y 120~240 GR 200~400 BL 350~70...