WT4433AM

www.DataSheet4U.com WT4433AM Surface Mount P-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT -6 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE D 1 3 S S G 8 7 D 2 D 6 S D 4 5 Features: *Super high dense cell design for low RDS(ON) R DS(ON) <35 mΩ @VGS = -10V R DS(ON) <55 m Ω@VGS = -4.5V *Rugged and Reliable *SO-8 Package 1 SO-8 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -30 Unite V V A A A W C/W C ±20 -6 -30 -1.7 2.5 50 -55 to 150 Device Marking WT4433AM=STM4433A http://www.weitron.com.tw WEITRON 1/6 29-Jun-05 www.DataSheet4U.com WT4433AM Electrical Characteristics Static (2) Characteristic (TA =25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ -1.9 - Max -3.0 +100 -1 35 55 Unit V V nA uA Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current +20V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V, ID=-5.8A VGS=-4.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-10V Forward Transconductance VDS=-15V, ID=-5.8A -30 -1 - -20 RDS (on) ID(on) gfs 21 40 mΩ 8.5 - A S - Dynamic (3) Input Cap...