NT5SV64M4BS

www.DataSheet4U.com NT5SV64M4BS / NT5SV64M4BT NT5SV32M8BS / NT5SV32M8BT NT5SV16M16BS / NT5SV16M16BT 256Mb Synchronous DRAM Features High Performance: 6K 75B Units CL=3 CL=3 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time1 Clock Access Time2 166 6 — 5 133 MHz 7.5 — 5.4 ns ns ns 1. Terminated load. See AC Characteristics on page 37 2. Unterminated load. See AC Characteristics on page 37 3. tRP = tRCD = 2 CKs Single Pulsed RAS Interface Fully Synchronous to Positive Clock Edge Four Banks controlled by BA0/BA1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8 Programmable Wrap: Sequential or Interleave Multiple Burst Read with Single Write Option Automatic and Controlled Precharge Command Data Mask for Read/Write control (x4, x8) Dual Data Mask for byte control (x16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode Standard Power operation 8192 refresh cycles/64ms Random Column Address every CK (1-N Rule) Single 3.3V ± 0.3V Power Supply LVTTL compatible Package: 54-pin 400 mil TSOP-Type II Lead-free & Halogen-free product available Description The NT5SV64M4BS, NT5SV64M4BT, NT5SV32M8BS, NT5SV32M8BT, NT5SV16M16BS, and NT5SV16M16BT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 166MHz by employing a pipeline c...