STW18NK80Z
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STW18NK80Z
N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH™ Power MOSFET
General fe...
Description
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STW18NK80Z
N-channel 800V - 0.34Ω - 19A - TO-247 Zener-protected SuperMESH™ Power MOSFET
General features
Type STW18NK80Z
■ ■ ■ ■ ■
VDSS 800V
RDS(on) <0.38Ω
ID 19A
pW 350W
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
TO-247
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Internal schematic diagram
Applications
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Switching application
Order codes
Part number STW18NK80Z Marking W18NK80Z Package TO-247 Packaging Tube
October 2006
Rev 4
1/14
www.st.com 14
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Contents
STW18NK80Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................. 7
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . ...
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