(USF5x49) THYRISTOR SILICON PLANAR TYPE
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SF5G49,SF5J49,USF5G49,USF5J49
TOSHIBA Thyristor Silicon Planar Type
SF5G49,SF5J49,USF5G49,USF5J49
...
Description
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SF5G49,SF5J49,USF5G49,USF5J49
TOSHIBA Thyristor Silicon Planar Type
SF5G49,SF5J49,USF5G49,USF5J49
Medium Power Control Applications
· · · Repetitive peak off-state voltage: VDRM = 400, 600 V Repetitive peak reverse voltage: VRRM = 400, 600 V Average on-state current: IT (AV) = 5 A Gate trigger current: IGT = 70 µA max Unit: mm
Maximum Ratings
Characteristics Repetitive peak off-state voltage and Repetitive peak reverse voltage (RGK = 330 W) Non-repetitive peak reverse voltage (non-repetitive < 5 ms, Tj = 0~125°C, RGK = 330 W) Average on-state current R.M.S on-state current Peak one cycle surge on-state current (non-repetitive) I2t limit value Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range SF5G49 USF5G49 SF5J49 USF5J49 SF5G49 USF5G49 SF5J49 USF5J49 Symbol Rating 400 V 600 500 VRSM 720 IT (AV) IT (RMS) ITSM I2t PGM PG (AV) VFGM VRGM IGM Tj Tstg 5 7.8 65 (50 Hz) 20 0.5 0.05 5 -5 200 -40~125 -40~125 A A A A2s W W V V mA °C °C V Unit
VDRM VRRM
JEDEC JEITA TOSHIBA
― ― 13-7F1A
Weight: 0.36 g (typ.)
Note: Should be used with gate resistance as follows:
Anode
Gate
RGK < = 330 W
Cathode
JEDEC JEITA TOSHIBA
― ― 13-F2A
Weight: 0.28 g (typ.)
1
2002-02-05
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SF5G49,SF5J49,USF5G49,USF5J49
Electrical Characteristics (Ta = 25°C)
Characteristics Repetitive peak off-state current and Repetitive peak rever...
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