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TRANSISTOR. 2SC4115E Datasheet

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TRANSISTOR. 2SC4115E Datasheet






2SC4115E TRANSISTOR. Datasheet pdf. Equivalent




2SC4115E TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC4115E

Description

TRANSISTOR



Feature


www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP- 03A Plastic-Encapsulate Transistors 2SC 4115E TRANSISTOR C WBFBP-03A (1.6×1.6 0.5) unit: mm DESCRIPTION NPN Epitaxi al planar Silicon Transistor FEATURES L ow VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/I B = 2A/0.1A) APPLICATION Excellent curr ent gain characteristics For portable e quipment:(i.e. Mobil.
Manufacture

Jiangsu Changjiang Electronics

Datasheet
Download 2SC4115E Datasheet


Jiangsu Changjiang Electronics 2SC4115E

2SC4115E; e phone,MP3, MD,CD-ROM, DVD-ROM, Note bo ok PC, etc.) MARKING:CFQ, CFR, CFS C T OP B 1. BASE 2. EMITTER 3. COLLECTOR E C BACK E B CFQ B E MAXIMUM RATING S TA=25℃ unless otherwise noted Symbo l VCBO VCEO VEBO IC PD TJ Tstg Paramete r Collector-Base Voltage Collector-Emit ter Voltage Emitter-Base Voltage Collec tor Current -Continuous Total Device Di ssipation Junction T.


Jiangsu Changjiang Electronics 2SC4115E

emperature Storage Temperature Value 40 20 6 3 150 150 -55-150 Units V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (T amb=25℃ unless otherwise specified) P arameter Collector-base breakdown volta ge Collector-emitter breakdown voltage Emitter-base breakdown voltage Collecto r cut-off current Emitter cut-off curre nt DC current gain Collector-emitter sa turation voltage* Transi.


Jiangsu Changjiang Electronics 2SC4115E

tion frequency Collector output capacita nce Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO IEBO hFE VCEsat Test conditions MIN 40 20 6 0.1 0.1 120 560 0.5 290 25 V M Hz pF TYP MAX UNIT V V V µA µA IC= 50 µA , IE=0 IC= 1mA , IB=0 IE=50µA, IC= 0 VCB=30V , VCE=2 V, IE=0 IC= 0.1A VEB= 5V , IC=0 IC= 2A, IB=0.1A VCE=2V, IC=0 .5 A f=100MHz VCB=10V,IE=0,f=1MHz R 180 -390 fT Cobo Q 120-27.

Part

2SC4115E

Description

TRANSISTOR



Feature


www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP- 03A Plastic-Encapsulate Transistors 2SC 4115E TRANSISTOR C WBFBP-03A (1.6×1.6 0.5) unit: mm DESCRIPTION NPN Epitaxi al planar Silicon Transistor FEATURES L ow VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/I B = 2A/0.1A) APPLICATION Excellent curr ent gain characteristics For portable e quipment:(i.e. Mobil.
Manufacture

Jiangsu Changjiang Electronics

Datasheet
Download 2SC4115E Datasheet




 2SC4115E
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
2SC4115E TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
FEATURES
Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)
APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:CFQ, CFR, CFS
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
TOP
C
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
CFQ
BE
MAXIMUM RATINGS TA=25unless otherwise noted
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
40
20
6
3
PD Total Device Dissipation
150
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
Units
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
Transition frequency
fT
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Cobo
Q
Range
120-270
Test conditions
IC= 50µA , IE=0
IC= 1mA , IB=0
IE=50µA, IC=0
VCB=30V , IE=0
VEB= 5V , IC=0
VCE=2 V, IC= 0.1A
IC= 2A, IB=0.1A
VCE=2V, IC=0.5 A
f=100MHz
VCB=10V,IE=0,f=1MHz
R
180-390
MIN TYP
40
20
6
120
MAX
0.1
0.1
560
0.5
290
25
S
270-560
UNIT
V
V
V
µA
µA
V
MHz
pF




 2SC4115E
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Typical Characteristics
2SC4115E




 2SC4115E
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Sym bol
A
A1
b
b1
D
E
D2
E2
e
L
L1
L2
L3
L4
k
z
D im e n s io n s In M illim e te rs
M in .
M ax.
0 .4 5 0
0 .5 5 0
0 .0 1 0
0 .0 9 0
0 .2 3 0
0 .3 3 0
0 .3 2 0 R E F .
1 .5 5 0
1 .6 5 0
1 .5 5 0
1 .6 5 0
0 .7 5 0 R E F .
1 .0 0 0 R E F .
1 .0 0 0 T YP .
0 .2 8 0 R E F .
0 .2 3 0 R E F .
0 .1 8 0 R E F .
0 .2 5 0 R E F .
0 .2 0 0 R E F .
0 .3 2 0 R E F .
0 .1 6 0 R E F .
D im e n s io n s In In c h e s
M in .
M ax.
0 .0 1 8
0 .0 2 2
0 .0 0 0
0 .0 0 4
0 .0 0 9
0 .0 1 3
0 .0 1 3 R E F .
0 .0 6 1
0 .0 6 5
0 .0 6 1
0 .0 6 5
0 .0 3 0 R E F .
0 .0 4 0 R E F .
0 .0 4 0 T YP .
0 .0 1 1 R E F .
0 .0 0 9 R E F .
0 .0 0 7 R E F .
0 .0 1 0 R E F .
0 .0 0 8 R E F .
0 .0 1 3 R E F .
0 .0 0 6 R E F .



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