PHB29N08T

www.DataSheet4U.com PHP/PHB29N08T TrenchMOS™ standard level FET Rev. 01 — 29 May 2002 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP29N08T in SOT78 (TO-220AB) PHB29N08T in SOT404 (D2-PAK). 2. Features s High noise immunity s Low on-state resistance. 3. Applications s Industrial motor control. 4. Pinning information Table 1: Pinning - SOT78, SOT404 simplified outline and symbol Simplified outline mb mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 1 MBK106 3 MBK116 1 2 3 SOT78 (TO-220AB) [1] It is not possible to make connection to pin 2 of the SOT404 package. SOT404 (D2-PAK) www.DataSheet4U.com Philips Semiconductors PHP/PHB29N08T TrenchMOS™ standard level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 °C ≤ Tj ≤ 175 °C Tmb = 25 °C; VGS = 11 V Tmb = 25 °C VGS = 11 V; ID = 14 A Tj = 25 °C Tj = 175 °C 40 96 50 120 mΩ mΩ Typ Max 75 27 88 175 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain cu...