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BUK9604-40A

NXP

(BUK9x04-40A) TrenchMOS logic level FET

www.DataSheet4U.com BUK95/96/9E04-40A TrenchMOS™ logic level FET Rev. 01 — 24 October 2001 Product data 1. Description...


NXP

BUK9604-40A

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Description
www.DataSheet4U.com BUK95/96/9E04-40A TrenchMOS™ logic level FET Rev. 01 — 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78, SOT404, SOT226 simplified outline and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) 2 MBB076 Simplified outline [1] mb mb mb Symbol d g s 1 MBK106 3 MBK116 1 2 3 MBK112 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT226 (I2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. www.DataSheet4U.com Philips Semiconductors BUK95/96/9E04-40A TrenchMOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.3 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A [1] Symbol Parameter drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Typ 3.5 3.7 2.9 Max 40 198 300 ...




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