www.DataSheet4U.com
BUK95/9609-55A
TrenchMOS™ logic level FET
Rev. 01 — 21 February 2002 Product data
1. Description
N...
www.DataSheet4U.com
BUK95/9609-55A
TrenchMOS™ logic level FET
Rev. 01 — 21 February 2002 Product data
1. Description
N-channel enhancement mode field-effect power
transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK).
2. Features
s s s s TrenchMOS™ technology Q101 compliant 175 °C rated Logic level compatible.
3. Applications
s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base; connected to drain (d)
g s
[1]
Simplified outline
mb mb
Symbol
d
2
MBK106
MBB076
1
3
MBK116
1 2 3
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D2-PAK)
www.DataSheet4U.com
Philips Semiconductors
BUK95/9609-55A
TrenchMOS™ logic level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25 °C; VGS = 5 V; ID = 25 A Tj = 25 °C; VGS = 4.5 V; ID = 25 A Tj = 25 °C; VGS = 10 V; ID = 25 A Typ 7.6 6.4 Max 55 108 211 175 9 10 8 Unit V A W °C mΩ mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values I...
