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2SK3850 Datasheet, Equivalent, Silicon MOSFET.N-Channel Silicon MOSFET N-Channel Silicon MOSFET |
| Part | 2SK3850 |
|---|---|
| Description | N-Channel Silicon MOSFET |
| Feature | Ordering number : ENN8193
2SK3850
2SK3 850
N-Channel Silicon MOSFET
General-P urpose Switching Device Applications
F eatures
• Best suited for motor drive . • Low ON-resistance. • Low Qg. S pecifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu rrent (DC) Drain Current (Pulse) Allowa ble Power Dissipation Channel Temperatu re Storage Temperature Symbol VDSS VGS S ID IDP PD Tch Tstg Conditions PW≤1 0µs, duty cycle≤1% Tc=25°C Electri cal Characteristics at Ta=25°C Parame ter Drain-to-Source Breakdown Voltage Z ero-Gate Voltage Drain Curre . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
| Part | 2SK3850 |
|---|---|
| Description | N-Channel Silicon MOSFET |
| Feature | Ordering number : ENN8193
2SK3850
2SK3 850
N-Channel Silicon MOSFET
General-P urpose Switching Device Applications
F eatures
• Best suited for motor drive . • Low ON-resistance. • Low Qg. S pecifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu rrent (DC) Drain Current (Pulse) Allowa ble Power Dissipation Channel Temperatu re Storage Temperature Symbol VDSS VGS S ID IDP PD Tch Tstg Conditions PW≤1 0µs, duty cycle≤1% Tc=25°C Electri cal Characteristics at Ta=25°C Parame ter Drain-to-Source Breakdown Voltage Z ero-Gate Voltage Drain Curre . |
| Manufacture | Sanyo Semicon Device |
| Datasheet |
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