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2SK3857TK Datasheet, Equivalent, N-Channel MOSFET.Silicon N-Channel MOSFET Silicon N-Channel MOSFET |
　
　
　
| Part | 2SK3857TK |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | www. DataSheet4U. com 2SK3857TK TOSHIBA F ield Effect Transistor Silicon N Channe l Junction Type 2SK3857TK For ECM • Application for Ultra-compact ECM 0. 22 ±0. 05 1. 2±0. 05 0. 8±0. 05 0. 32±0. 05 3 2 0. 1±0. 05 Unit: mm 0. 45 0. 45 1. 4± 0. 05 0. 9±0. 1 Absolute Maximum Rating s (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissip ation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 − 55~125 Unit V mA mW °C °C 1 0. 395± 0. 03 TESM3 IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA 1. Drain 2. Source 3. Gate JEDEC JEITA TOS . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
| Part | 2SK3857TK |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | www. DataSheet4U. com 2SK3857TK TOSHIBA F ield Effect Transistor Silicon N Channe l Junction Type 2SK3857TK For ECM • Application for Ultra-compact ECM 0. 22 ±0. 05 1. 2±0. 05 0. 8±0. 05 0. 32±0. 05 3 2 0. 1±0. 05 Unit: mm 0. 45 0. 45 1. 4± 0. 05 0. 9±0. 1 Absolute Maximum Rating s (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissip ation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 − 55~125 Unit V mA mW °C °C 1 0. 395± 0. 03 TESM3 IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA 1. Drain 2. Source 3. Gate JEDEC JEITA TOS . |
| Manufacture | Toshiba Semiconductor |
| Datasheet |
　
　
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