DatasheetsPDF.com

2SK3857TK Datasheet, Equivalent, N-Channel MOSFET.

Silicon N-Channel MOSFET

Silicon N-Channel MOSFET

 

 

 

Part 2SK3857TK
Description Silicon N-Channel MOSFET
Feature www.
DataSheet4U.
com 2SK3857TK TOSHIBA F ield Effect Transistor Silicon N Channe l Junction Type 2SK3857TK For ECM
• Application for Ultra-compact ECM 0.
22 0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05 Unit: mm 0.
45 0.
45 1.
4± 0.
05 0.
9±0.
1 Absolute Maximum Rating s (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissip ation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 − 55~125 Unit V mA mW °C °C 1 0.
395± 0.
03 TESM3 IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA 1.
Drain 2.
Source 3.
Gate JEDEC JEITA TOS .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3857TK Datasheet
Part 2SK3857TK
Description Silicon N-Channel MOSFET
Feature www.
DataSheet4U.
com 2SK3857TK TOSHIBA F ield Effect Transistor Silicon N Channe l Junction Type 2SK3857TK For ECM
• Application for Ultra-compact ECM 0.
22 0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05 Unit: mm 0.
45 0.
45 1.
4± 0.
05 0.
9±0.
1 Absolute Maximum Rating s (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissip ation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 − 55~125 Unit V mA mW °C °C 1 0.
395± 0.
03 TESM3 IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA 1.
Drain 2.
Source 3.
Gate JEDEC JEITA TOS .
Manufacture Toshiba Semiconductor
Datasheet
Download 2SK3857TK Datasheet

2SK3857TK

2SK3857TK
2SK3857TK

2SK3857TK

Recommended third-party 2SK3857TK Datasheet

 

 

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)