2SK3857TK

www.DataSheet4U.com 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm 0.45 0.45 1.4±0.05 0.9±0.1 Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C °C 1 0.395±0.03 TESM3 IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA 1.Drain 2.Source 3.Gate JEDEC JEITA TOSHIBA 2-1R1A Weight: 2.2mg (typ.) Marking Equivalent Circuit D Type Name 9 IDSS Classification Symbol A :A -Rank B :B-Rank G S 1 2007-01-08 www.DataSheet4U.com 2SK3857TK Electrical Characteristics (Ta=25°C) Characteristic Drain Current Drain Current Gate-Source Cut-off Voltage Forward transfer admittance Gate-Drain Voltage Input capacitance Voltage Gain Delta Voltage Gain Delta Voltage Gain Noise Voltage Total Harmonic Distortion Time Output Stability Symbol IDSS ID VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2.2kΩ,Cg = 5pF Test Condition Min 140 ⎯ -0.1 0.9 -20 ⎯ -3.0 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1.3 ⎯ 3.5 -0.5 0 -0.8 25 0.7 100 Max 350 370 -1.0 ⎯ ⎯ ⎯ ⎯ -1 -2 55 ⎯ 200 Unit µA µA V mS V pF dB dB dB mV % ms VGS(OFF) VDS = 2 V, ID = 1µA |Yfs| VDS = 2 V,VGS = 0V V(BR)GDO IG=-10µA Ciss Gv DGv(f) DGv(V) VN THD tos VDS = 2 V, VGS = 0, f = 1 MHz VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV VDD ...