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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Silicon Bidirectional Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat Dissipation and Durability
T2500FP Series
ISOLATED TRIACs THYRISTORS 6 AMPERES RMS 200 thru 800 VOLTS
MT2 G
MT1
CASE 221C-02 STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Repetitive Peak Off-State Voltage(1) (TJ = –40 to +100°C, Gate Open) T2500BFP T2500DFP T2500MFP T2500NFP On-State RMS Current (TC = +80°C)(2) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 1 µs) Average Gate Power (TC = +80°C, t = 8.3 ms) Peak Gate Trigger Current (Pulse Width = 10 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Range Storage Temperature Range IT(RMS) ITSM I2t PGM PG(AV) IGTM VISO TJ Tstg Symbol VDRM 200 400 600 800 6 60 40 1 0.2 4 1500 –40 to +100 –40 to +150 Amps Amps A2s Watt Watt Amps Volts °C °C Value Unit Volts
p 20%)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case(2) Case to Sink Junction to Ambient Symbol RθJC RθCS RθJA Max 2.7 2.2(typ) 60 Unit °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Motorola Thyristor Device Data © Motorola, Inc. 1995
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Peak Off-State Current (Either Direction) (VD = Rated VDRM, TJ = 100°C, Gate Open) Maximum On-State Voltage (Either Direction)* (IT = 30 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) Gate Trigger Voltage (Continuous dc) (All Quadrants) (VD = 12 Vdc, RL = 12 Ohms) (VD = VDROM, RL = 125 Ohms, TC = 100°C, All Trigger Models) Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 150 mA, TC = 25°C) Gate Controlled Turn-On Time (VD = Rated VDRM, IT = 10 A, IGT = 160 mA, Rise Time 0.1 µs) Symbol IDRM VTM IGT — — — — VGT — 0.2 IH — 1.25 — 15 2.5 — 30 mA 10 2.