TRANSISTOR. 2SB1018A Datasheet

2SB1018A TRANSISTOR. Datasheet pdf. Equivalent

Part 2SB1018A
Description TRANSISTOR
Feature www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB.
Manufacture Toshiba Semiconductor
Datasheet
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2SB1018A
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2SB1018A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications
Power Amplifier Applications
Unit: mm
High collector current: IC = 7 A
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A)
Complementary to 2SD1411A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 7 A
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
30
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21



2SB1018A
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Electrical Characteristics (Tc = 25°C)
2SB1018A
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 100 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
(Note)
VCE = 1 V, IC = 1 A
hFE (2)
VCE (sat)
VCE = 1 V, IC = 4 A
IC = 4 A, IB = 0.4 A
VBE (sat) IC = 4 A, IB = 0.4 A
fT VCE = 4 V, IC = 1 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― −5 μA
― ― −5 μA
80
V
70 240
30 ― ―
― −0.3 0.5
― −0.9 1.4
V
10 MHz
250
pF
Turn-on time
ton
20 μs Input IB2
Output
0.4
Switching time Storage time
Fall time
tstg IB1
VCC = 30 V
tf
IB1 = IB2 = 0.3 A, duty cycle 1%
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
2.5
μs
0.5
Marking
B1018A
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21





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