2SC5252. C5252 Datasheet

C5252 2SC5252. Datasheet pdf. Equivalent

Part C5252
Description 2SC5252
Feature www.DataSheet4U.com 2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Appl.
Manufacture Hitachi Semiconductor
Datasheet
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C5252
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2SC5252
Silicon NPN Triple Diffused Planar
Application
Character display horizontal deflection output
Features
High breakdown voltage
VCBO = 1500 V
High speed switching
tf 0.15 µsec(typ.)
Isolated package
TO–3P•FM
Outline
TO-3PFM
ADE-208-391A (Z)
2nd. Edition
1
2
3
1. Base
2. Collector
3. Emitter



C5252
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2SC5252
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC*1
Tj
Tstg
Ratings
1500
800
6
15
30
50
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
800
Emitter to base breakdown
voltage
V(BR)EBO
6
Collector cutoff current
DC current transfer ratio
DC current transfer ratio
Collector to emitter saturation
voltage
ICES
hFE1
hFE2
VCE(sat)
8
3
Base to emitter saturation
voltage
VBE(sat)
Fall time
tf
Typ Max Unit Test conditions
— — V IC = 10 mA, RBE =
— — V IE = 10 mA, IC = 0
500 µA
VCE = 1500 V, RBE = 0
— 35
VCE = 5 V, IC = 1 A
—6
VCE = 5 V, IC = 8 A
— 5 V IC = 10 A, IB = 3 A
— 1.5 V IC = 10 A, IB = 3 A
0.15 0.3 µsec ICP = 7 A, IB1 = 2 A, fH = 31.5 kHz
2





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