STGP3NB60F. 3NB60F Datasheet


3NB60F STGP3NB60F. Datasheet pdf. Equivalent


Part Number

3NB60F

Description

STGP3NB60F

Manufacture

STMicroelectronics

Total Page 14 Pages
Datasheet
Download 3NB60F Datasheet


3NB60F
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STGP3NB60F - STGD3NB60F
STGP3NB60FD-STGF3NB60FD-STGB3NB60FD
N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK
PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
(Typ) @125°C @125°C
STGP3NB60F
STGD3NB60F
STGP3NB60FD
STGF3NB60FD
STGB3NB60FD
600 V
600 V
600 V
600 V
600 V
< 2.4 V
< 2.4 V
< 2.4 V
< 2.4 V
< 2.4 V
3A
3A
3A
3A
3A
s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (Vcesat)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s OFF LOSSES INCLUDE TAIL CURRENT
s HIGH FREQUENCY OPERATION
s SHORT CIRCUIT RATED
3
2
1
TO-220
3
1
D2PAK
3
2
1
TO-220FP
3
1
DPAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESHIGBTs, with outstanding performances.
The suffix “F” identifies a family optimized to achieve
very low switching times for frequency applications
(<40 KHz)
APPLICATIONS
s MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
Std. Version
“D” Version
ORDERING INFORMATION
SALES TYPE
STGP3NB60F
STGD3NB60FT4
STGP3NB60FD
STGF3NB60FD
STGB3NB60FDT4
MARKING
GP3NB60F
GD3NB60F
GP3NB60FD
GF3NB60FD
GB3NB60FD
PACKAGE
TO-220
DPAK
TO-220
TO-220FP
D2PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
TAPE & REEL
June 2003
1/14

3NB60F
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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
VECR
VGE
IC
IC
ICM ( )
If (1)
Ifm (1)
PTOT
Collector-Emitter Voltage (VGS = 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at TC = 25°C
Collector Current (continuous) at TC = 100°C
Collector Current (pulsed)
Forward Current
Forward Current Pulsed
Total Dissipation at TC = 25°C
Derating Factor
VISO
Tstg
Tj
Insulation Withstand Voltage A.C.
Storage Temperature
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
(1) For “D” version only
Value
TO-220/D2PAK TO-220FP
600
20
±20
6
3
24
3
24
68 25
0.55 0.2
-- 2500
– 55 to 150
150
DPAK
60
0.47
--
Unit
V
V
V
A
A
A
A
A
W
W/°C
V
°C
°C
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
TO-220/D2PAK TO-220FP
1.8 5
62.5
0.5
DPAK
2.1
100
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
Parameter
Test Conditions
Min. Typ. Max.
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
Voltage
600
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25°C
VCE = Max Rating, TC = 125°C
50
100
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
VGE(th) Gate Threshold Voltage
VCE = VGE, IC = 250 µA
3
5
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15 V, IC = 3 A
VGE = 15 V, IC = 3 A, Tj =125°C
1.9 2.4
1.6
Unit
V
µA
µA
nA
V
V
V
2/14


Features www.DataSheet4U.com STGP3NB60F - STGD3N B60F STGP3NB60FD-STGF3NB60FD-STGB3NB60F D N-CHANNEL 3A - 600V - TO-220/TO-220FP /DPAK/D2PAK PowerMESH™ IGBT TYPE STGP 3NB60F STGD3NB60F STGP3NB60FD STGF3NB60 FD STGB3NB60FD s s s s s s s VCES 600 V 600 V 600 V 600 V 600 V VCE(sat) (Ty p) @125°C < 2.4 V < 2.4 V < 2.4 V < 2. 4 V < 2.4 V IC @125°C 3A 3A 3A 3A 3A 3 1 2 1 2 3 TO-220 TO-220FP HIGH I NPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON- VOLTAGE DROP (Vcesat) LOW GATE CHARGE H IGH CURRENT CAPABILITY OFF LOSSES INCLU DE TAIL CURRENT HIGH FREQUENCY OPERATIO N SHORT CIRCUIT RATED 3 3 1 1 D2PAK DPAK INTERNAL SCHEMATIC DIAGRAM DESCR IPTION Using the latest high voltage te chnology based on a patented strip layo ut, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performance s. The suffix “F” identifies a fami ly optimized to achieve very low switch ing times for frequency applications (< 40 KHz) APPLICATIONS s MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCHI.
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