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C3117 Dataheets PDF



Part Number C3117
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SC3117
Datasheet C3117 DatasheetC3117 Datasheet (PDF)

www.DataSheet4U.com Ordering number:ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses · Color TV sound output, converters, inverters. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 Features · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. 1.6 0.8 0.8 0.6 3.0 1.5 3.0 7.0 11.0 15.5 0.5 ( ) : 2SA1249 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B.

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www.DataSheet4U.com Ordering number:ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses · Color TV sound output, converters, inverters. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 Features · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. 1.6 0.8 0.8 0.6 3.0 1.5 3.0 7.0 11.0 15.5 0.5 ( ) : 2SA1249 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.2 1 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126 Ratings (–)180 (–)160 (–)6 (–)1.5 (–)2.5 1 Unit V V V A A W W Tc=25˚C 10 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA 100* 90* 120 MHz Conditions Ratings min typ max (–)1.0 (–)1.0 400* Unit µA µA * : 2SA1249/2SC3117 are classified by 100mA hFE as follows: Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70502TN (KT)/71598HA (KT)/4078TA/3187AT/D222KI, TS No.1060-1/3 www.DataSheet4U.com 2SA1249/2SC3117 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) Conditions VCB=(–)10V, f=1MHz IC=(–)500mA, IB=(–)50mA Ratings min typ (22) (–0.2) 0.13 (–)180 (–)160 (–)6 0.04 (0.7) 1.2 (0.04) 0.08 (–0.5) 0.45 max Unit pF V V V V V µs µs µs VBE(sat) IC=(–)500mA, IB=(–)50mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ton tstg tf IE=(–)10µA, IC=0 See Specified Test.


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