CHA1077

www.DataSheet4U.com CHA1077 PRELIMINARY W-band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1077 is a W-band monolithic 3-stages low noise amplifier. All the active devices are internally self-biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured on P-HEMT process: 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN OUT +V -V Main Features n n n n n n n W-band low noise amplifier High gain Wide operating frequency range High temperature range On-chip self biasing Automatic assembly oriented Low DC power consumption n Chip size: 2.6x1.32x 0.1mm W-band amplifier block-diagram Main Characteristics Tamb = +25°C Symbol F_op G_lin NF P_1dB Parameter Operating frequency Small signal gain Noise figure Output power at 1dB Min 76 15 4.5 10 Typ Max 77 Unit GHz dB dB dBm ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. DSCHA10773155 - 04 jun 03 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 www.DataSheet4U.com CHA1077 Electrical Characteristics W-band LNA Full operating temperature range, used according to section “Typical assembly and bias configuration”. Symbol F_op G_lin G_fl NF P_out_1dB Is VSWR_in VSWR_out +V +I ...