K3528 2SK3528 Datasheet

K3528 Datasheet, PDF, Equivalent


Part Number

K3528

Description

2SK3528

Manufacture

Fuji Electric

Total Page 4 Pages
Datasheet
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K3528
2SK3528-01Rwww.DataSheet4U.com
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-3PF
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
600 V
VDSX *5
600 V
Continuous drain current
ID
±17 A
Pulsed drain current
ID(puls]
±68 A
Gate-source voltage
VGS
±30 V
Repetitive or non-repetitive
IAR *2
17 A
Maximum Avalanche Energy
EAS
*1
412
mJ
Maximum Drain-Source dV/dt
dVDS/dt *4
20 kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
3.125
120
W
Operating and storage
Tch
+150
°C
temperature range
Tstg
-55 to +150
°C
Isolation Voltage
VISO *6
2 kVrms
*1 L=2.62mH, Vcc=60V *2 Tch<=150°C *3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C
*4 VDS<= 600V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=8.5A VGS=10V
Tch=25°C
Tch=125°C
ID=8.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V ID=8.5A
VGS=10V
RGS=10
VCC=300V
ID=17A
VGS=10V
L=2.62mH Tch=25°C
IF=17A VGS=0V Tch=25°C
IF=17A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
600 V
3.0 5.0 V
25 µA
250
10 100
nA
0.29 0.37
10 20
S
2280 3420
pF
290 435
16 24
26 39 ns
37 56
78 117
13 19
54 81 nC
15 23
20 30
17 A
0.93 1.50 V
0.7 µs
10.0
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
1.042 °C/W
40.0 °C/W
1

K3528
www.DataSheet4U.com
2SK3528-01R
Characteristics
Allowable Power Dissipation
PD=f(Tc)
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
FUJI POWER MOSFET
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
45
20V
10V
40 8V
7.0V
35
30
6.5V
25
20
15
6.0V
10
5 VGS=5.5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10 10
11
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.8
VGS=
5.5V
0.7
6.0V
6.5V
0.6
0.5 7.0V 8V
10V
0.4 20V
0.3
0.2
0.1
0.0
0
5 10 15 20 25 30 35 40 45
ID [A]
0.1
0.1
1 10
ID [A]
100
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
1.0
0.9
0.8
0.7
0.6
0.5 max.
0.4
0.3
typ.
0.2
0.1
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
2


Features www.DataSheet4U.com 2SK3528-01R FUJI PO WER MOSFET N-CHANNEL SILICON POWER MOSF ET Outline Drawings TO-3PF Super FAP-G Series Features High speed switching L ow on-resistance No secondary breadown Low driving power Avalanche-proof Appl ications Switching regulators UPS (Unin terruptible Power Supply) DC-DC convert ers Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unle ss otherwise specified) Item Drain-sour ce voltage Continuous drain current Pul sed drain current Gate-source voltage R epetitive or non-repetitive Maximum Ava lanche Energy Maximum Drain-Source dV/d t Peak Diode Recovery dV/dt Max. power dissipation Operating and storage tempe rature range Isolation Voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=2 5°C Tch Tstg VISO *6 Ratings 600 600 17 ±68 ±30 17 412 20 5 3.125 120 +15 0 -55 to +150 2 Unit V V A A V A mJ kV/ µs kV/µs W Equivalent circuit schema tic Drain(D) Gate(G) Source(S) °C °C kVrms < < *3 I F -I D , -di/dt=5.
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