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TIC216M

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SILICON TRIACS

www.DataSheet4U.com TIC216 SERIES SILICON TRIACS ● ● ● ● ● Sensitive Gate Triacs 6 A RMS Glass Passivated Wafer 400 V...


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TIC216M

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www.DataSheet4U.com TIC216 SERIES SILICON TRIACS ● ● ● ● ● Sensitive Gate Triacs 6 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1 - 3) MT1 MT2 G TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING TIC216D Repetitive peak off-state voltage (see Note 1) TIC216M TIC216S TIC216N Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) Average gate power dissipation at (or below) 85°C case temperature (see Note 4) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) ITSM IGM PGM PG(AV) TC Tstg TL VDRM SYMBOL VALUE 400 600 700 800 6 60 ±1 2.2 0.9 -40 to +110 -40 to +125 230 A A A W W °C °C °C V UNIT NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 150 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge may be repeated after the d...




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