H03N60 Datasheet (data sheet) PDF





H03N60 Datasheet, N-Channel Power Field Effect Transistor

H03N60   H03N60  

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www.DataSheet4U.com HI-SINCERITY MICROE LECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Ser ies N-Channel Power Field Effect Transi stor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET u ses an advanced termination scheme to p rovide enhanced voltage-blocking capabi lity without degratding performance ove r time. In addition, this advanced MOSF ET is designed to withstand high energy in avalanche and commutation modes. Th e new energy efficient design also offe rs a drain-to-source diode with a fast recovery time. Designed for high voltag e, high speed switching a

H03N60 Datasheet, N-Channel Power Field Effect Transistor

H03N60   H03N60  
pplications in power supplies, converter s and PWM motor controls, these devices are particularly well suited for bridg e circuits where diode speed and commut ating safe operating areas are critical and offer additional and saafety margi n against unexpected voltage transients . 1 2 3 3-Lead Plastic TO-220AB Packag e Code: E Pin 1: Gate Pin 2 & Tab: Drai n Pin 3: Source 3-Lead Plastic TO-220F P Package Code: F Pin 1: Gate Pin 2: Dr ain Pin 3: Source 1 2 3 D G S Feature s H03N60 Series Symbol: • Robust Hi gh Voltage Termination • Avalanc he E nergy Specified • Source-to-Drain Dio de Recovery Time Comparable to a Discre te Fast Recovery Diode • Diode is Cha racterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevat ed Temperature Absolute Maximum Rating s Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current ( Pulsed) Gate-to-Source Voltage (Continu e) Total Power Dissipation (TC=25 C) H0 3N60E (TO-220AB) PD H03N60F (TO-220FP) Derate above 25°C H03N60E (TO-220AB) H 03N60F (TO-220FP) Tj, Tstg EAS TL Opera ting and Storage Temperature Range Sing le Pulse Drain-to-Source Avalanche Enrg y-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L =10mH, RG=25Ω) Maximum Lead Temperatu re for Soldering Purposes, 1/8” from case for 10 seconds 0.4 0.33 -55 to 150 35 260 °C mJ °C W/°C 55 28








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